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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국진공학회(ASCT) Applied Science and Convergence Technology Applied Science and Convergence Technology Vol.32 No.2
- 발행연도
- 2023.3
- 수록면
- 41 - 44 (4page)
이용수
초록· 키워드
오류제보하기
Absolute Hall-effect sensitivity (S<SUB>A</SUB>) and minimum magnetic resolution (B<SUB>min</SUB>) of two-dimensional (2D) van der Waals Hall elements are predicted without magnetic fields by considering the drain voltage-dependent transconductance and current power spectrum density (PSD). The measured drain-bias-dependent PSD of rhenium disulfide multilayers is suitably described by the carrier number fluctuation noise model, indicating that the effects of carrier trapping/de-trapping into oxide traps dominate the observed current variations. To achieve high current-normalized Hall sensitivity and S<SUB>A</SUB> with a low B<SUB>min</SUB> at a specific current value, the contact resistance and oxide trap density should be further optimized. Our discussion provides an effective approach for the optimization of 2D multilayer-based Hall elements.
목차
ABSTRACT
1. Introduction
2. Experimental details
3. Results and discussion
4. Conclusions
References
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