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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 발행연도
- 2024.2
- 수록면
- 315 - 322 (8page)
- DOI
- 10.1007/s12540-023-01503-w
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초록· 키워드
오류제보하기
Irradiation induced creep (IIC) of Al–Sc binary alloy system is measured in TEM using cantilever beam methods. For measuringirradiation-induced creep, Al+ion irradiation is employed. Here, various temperatures are applied through laser heating,and the increment of creep compliance, of order ~ 10−4 dpa−1 MPa−1, are observed as the laser heating power (temperature)increases. This IIC creep compliance in excess of 100 MPa shows the low stress creep mechanism. The microstructuralbehavior is also studied. In the dilute Al–Sc binary system, thermal diffusion becomes dominant for T > 400 °C, at this temperaturea high density of dislocation loops are observed under irradiation. This results shows that in-situ micro beam bendingIIC test on nanocrystalline Al–Sc works reliably and this is a promising method for other nanocrystalline Al alloy systems.
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