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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 발행연도
- 2024.1
- 수록면
- 33 - 41 (9page)
- DOI
- https://doi.org/10.1007/s13391-023-00429-0
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In this work, we investigate the use of annealed metal oxides in electron blocking layer (EBL) of photo-multiplication organicphotodetectors (PM-OPD), to obtain low leakage current, high external quantum effi ciency, and thereby, high detectivity.
Reliable and high-performance PM-OPD are obtained using multi-interfacial EBLs composed of metals such as Ni, Al, Agand Au, and their oxides, through a controlled annealing. The interfacial layer between the front electrode and absorptionlayer is metal–metal oxide layer with wide bandgap, for improved hole mobility and stable electron blocking under the drivingvoltages of the PM-OPD. Through the optimization of the structural stability of the PM-OPD, a high specifi c detectivityof 2.59 × 10 13 Jones is obtained under a low reverse voltage. The resulting photodetectors exhibit improved stability underrelatively low reverse voltages because of the Schottky barrier induced between the donor and acceptor, electrode components,and passivation eff ect of the free-electrons driven by the introduced multi-interfacial layers.
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