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논문 기본 정보
- 자료유형
- 학위논문
- 저자정보
- 지도교수
- 김양도
- 발행연도
- 2014
- 저작권
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Chalcopyrite CuInSe2(CIS)is considered to be an effective
light-absorbing material for thin film photovoltaic solar cells. CIS
thin films have been electrodeposited onto Mo coated and ITO glass
substrates in potentiostatic mode at room temperature. The deposition mechanism of CIS thin films has been studied using the cyclic
voltammetry (CV) technique. A cyclic voltammetric study was performed
in unitary Cu, In, and Se systems, binary Cu-Se and In-Se systems,
and a ternary Cu-In-Se system. The reduction peaks of the ITO
substrate were examined in separate Cu2+,In3+, and Se4+ solutions.
Electrodeposition experiments were conducted with varying deposition
potentials and electrolyte bath conditions. The morphological and
compositional properties of the CIS thin films were examined by field
emission scanning electron microscopy (FE-SEM) and energy dispersive
spectroscopy (EDS). The as-deposited films were annealed at 500℃ in
N2 gas for crystallization. The structural properties of the CIS
thin films after annealing were examined by x-ray diffraction (XRD).
The surface morphology of as-deposited CIS films exhibits spherical
and large-sized clusters. The deposition potential has a significant
effect on the film morphology and/or grain size, such that the
structure tended to grow according to the increase of the deposition
potential. A CIS layer deposited at -0.6 V nearly approached the
stoichiometric ratio of CuIn0.8Se1.8. The growth potential plays an
important role in controlling the stoichiometry of CIS films.
light-absorbing material for thin film photovoltaic solar cells. CIS
thin films have been electrodeposited onto Mo coated and ITO glass
substrates in potentiostatic mode at room temperature. The deposition mechanism of CIS thin films has been studied using the cyclic
voltammetry (CV) technique. A cyclic voltammetric study was performed
in unitary Cu, In, and Se systems, binary Cu-Se and In-Se systems,
and a ternary Cu-In-Se system. The reduction peaks of the ITO
substrate were examined in separate Cu2+,In3+, and Se4+ solutions.
Electrodeposition experiments were conducted with varying deposition
potentials and electrolyte bath conditions. The morphological and
compositional properties of the CIS thin films were examined by field
emission scanning electron microscopy (FE-SEM) and energy dispersive
spectroscopy (EDS). The as-deposited films were annealed at 500℃ in
N2 gas for crystallization. The structural properties of the CIS
thin films after annealing were examined by x-ray diffraction (XRD).
The surface morphology of as-deposited CIS films exhibits spherical
and large-sized clusters. The deposition potential has a significant
effect on the film morphology and/or grain size, such that the
structure tended to grow according to the increase of the deposition
potential. A CIS layer deposited at -0.6 V nearly approached the
stoichiometric ratio of CuIn0.8Se1.8. The growth potential plays an
important role in controlling the stoichiometry of CIS films.
목차
제 1 장 서론 1제 2 장 이론적 배경 92.1 태양전지 개요 92.1.1 태양전지의 원리 92.1.2 태양전지의 분류 142.1.3 CuInSe2(CIS)계 박막형 태양전지 192.2 전해증착(Electrodeposition) 개요 252.2.1 전해증착의 원리 252.2.2 금속의 환원기구 302.3 Cyclic Voltammetry(순환 전압 전류법)의 기본원리 35제 3 장 실험 방법 423.1 실험 개요 423.2 기판 준비 433.3 CIS 전해액 제조 433.4 CV 실험 및 CIS 박막 증착 443.5 CIS 박막의 열처리 45제 4 장 실험 결과 및 고찰 484.1 CV 실험 결과 484.2 CIS 박막 증착 결과 574.3 열처리 후 결정성 62제 5 장 결론 64참고 문헌 65Abstract 69감사의 글 71
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