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논문 기본 정보
- 자료유형
- 학위논문
- 저자정보
- 지도교수
- 강남현
- 발행연도
- 2014
- 저작권
- 부산대학교 논문은 저작권에 의해 보호받습니다.
이용수1
이 논문의 연구 히스토리 (4)
2013
Electromigration에 의한 Sn-0.7Cu 솔더와 Cu, ENIG 계면에서의 IMC 성장거동
허민혁
,
하형우
,
정기호
외 1명
대한용접학회 특별강연 및 학술발표대회 개요집
2013.11
학술대회자료
Electromigration에 의한 Sn-0.7Cu/Cu 솔더의 IMC 성장 거동
허민혁
,
하형우
,
정기호
외 3명
대한용접학회 특별강연 및 학술발표대회 개요집
2013.05
학술대회자료
Electro/Thermal-migration에 의한 Sn계 무연솔더의 IMC 성장속도
허민혁
,
하형우
,
정기호
외 1명
대한용접학회 특별강연 및 학술발표대회 개요집
2013.05
학술대회자료
- 이 논문의 후속연구가 궁금하신가요?
- 연관 학술논문 또는 학술발표를 통해 보다 발전된 연구결과를 확인하실 수 있습니다.
- 이 논문의 연구 히스토리 확인하기
초록· 키워드
오류제보하기
Fine pitch technology has been developed for miniaturization and high
performance of PCB(Printed Circuit Board). The reliability of PCB has emerged
as a critical concern. Because size of solder bump that chip and substrate
connect decreases, current density to solder bump increases by fine pitch
formation. Main failure mode is the open-circuit failure due to void formation
at the intermetallic compounds growth. This failure mode has been reported as
a result of electromigration damage. Therefore, this study is needed to predict and prevent the open circuit failure caused by intermetallic compounds growth.
This study predicted the IMC growth kinetic by electromigration in Sn-0.7Cu
solder bump. The intermetallic compounds during reflow process grow again
by electromigration due to the application of current density. The intermetallic
compounds under electromigration grow in proportion to current density.
Consequently, crack that the main factor cause open circuit failure is formed
by void formation and propagation at the intermetallic interface. Therefore,
Fick''s law and Nernst-Einstein equation are used for modeling of growth
kinetics of intermetallic compounds. Consequently, this study compared
modeling results and experiment results. A less error was derived from the
result of 1A simulation. But a little bit huge error was derived from the result
of Cu3Sn in 1.5A simulation. The reason of error is like as follows. IMC growth
is affect by thermomgration effect and electromigration effect. But this study
was taken only electromigration into account.
performance of PCB(Printed Circuit Board). The reliability of PCB has emerged
as a critical concern. Because size of solder bump that chip and substrate
connect decreases, current density to solder bump increases by fine pitch
formation. Main failure mode is the open-circuit failure due to void formation
at the intermetallic compounds growth. This failure mode has been reported as
a result of electromigration damage. Therefore, this study is needed to predict and prevent the open circuit failure caused by intermetallic compounds growth.
This study predicted the IMC growth kinetic by electromigration in Sn-0.7Cu
solder bump. The intermetallic compounds during reflow process grow again
by electromigration due to the application of current density. The intermetallic
compounds under electromigration grow in proportion to current density.
Consequently, crack that the main factor cause open circuit failure is formed
by void formation and propagation at the intermetallic interface. Therefore,
Fick''s law and Nernst-Einstein equation are used for modeling of growth
kinetics of intermetallic compounds. Consequently, this study compared
modeling results and experiment results. A less error was derived from the
result of 1A simulation. But a little bit huge error was derived from the result
of Cu3Sn in 1.5A simulation. The reason of error is like as follows. IMC growth
is affect by thermomgration effect and electromigration effect. But this study
was taken only electromigration into account.
목차
List of Tables iiiList of Figures iv제 1 장 서 론 1제 2 장 이론적 배경 42.1 전자패키징 동향 42.2 Flip Chip Ball Grid Array 62.2.1 Flip Chip Bonding 62.2.2 UBM(Under Bump Metallurgy) 72.3 Electromigration 132.3.1 Electromigration 정의 132.3.2 Black’s equation 18제 3 장 Modeling 193.1 Sn-Cu 금속간화합물 193.1.1 경계조건 193.1.2 금속간화합물 성장 모델 243.1.3 Electromigration 성장 식 273.1.4 변수 선정 30제 4 장 실험 방법 354.1 Coupon Design 354.2 Electromigration 실험 424.3 저항 측정 494.4 금속간화합물 성장 관찰과 두께 측정 504.5 확산계수 결정 54제 5 장 결과 및 고찰 555.1 시간 및 전류 변화에 따른 금속간화합물 성장 관찰 585.2 시간 및 전류 변화에 따른 금속간화합물 두께 측정 615.3 확산계수 결정 635.4 Simulation vs. Experiment 66제 6 장 결론 68참고문헌 71Abstract 72
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