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논문 기본 정보

자료유형
학위논문
저자정보

허민혁 (부산대학교, 부산대학교 대학원)

지도교수
강남현
발행연도
2014
저작권
부산대학교 논문은 저작권에 의해 보호받습니다.

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Fine pitch technology has been developed for miniaturization and high
performance of PCB(Printed Circuit Board). The reliability of PCB has emerged
as a critical concern. Because size of solder bump that chip and substrate
connect decreases, current density to solder bump increases by fine pitch
formation. Main failure mode is the open-circuit failure due to void formation
at the intermetallic compounds growth. This failure mode has been reported as
a result of electromigration damage. Therefore, this study is needed to predict and prevent the open circuit failure caused by intermetallic compounds growth.
This study predicted the IMC growth kinetic by electromigration in Sn-0.7Cu
solder bump. The intermetallic compounds during reflow process grow again
by electromigration due to the application of current density. The intermetallic
compounds under electromigration grow in proportion to current density.
Consequently, crack that the main factor cause open circuit failure is formed
by void formation and propagation at the intermetallic interface. Therefore,
Fick''s law and Nernst-Einstein equation are used for modeling of growth
kinetics of intermetallic compounds. Consequently, this study compared
modeling results and experiment results. A less error was derived from the
result of 1A simulation. But a little bit huge error was derived from the result
of Cu3Sn in 1.5A simulation. The reason of error is like as follows. IMC growth
is affect by thermomgration effect and electromigration effect. But this study
was taken only electromigration into account.

목차

List of Tables iii
List of Figures iv
제 1 장 서 론 1
제 2 장 이론적 배경 4
2.1 전자패키징 동향 4
2.2 Flip Chip Ball Grid Array 6
2.2.1 Flip Chip Bonding 6
2.2.2 UBM(Under Bump Metallurgy) 7
2.3 Electromigration 13
2.3.1 Electromigration 정의 13
2.3.2 Black’s equation 18
제 3 장 Modeling 19
3.1 Sn-Cu 금속간화합물 19
3.1.1 경계조건 19
3.1.2 금속간화합물 성장 모델 24
3.1.3 Electromigration 성장 식 27
3.1.4 변수 선정 30
제 4 장 실험 방법 35
4.1 Coupon Design 35
4.2 Electromigration 실험 42
4.3 저항 측정 49
4.4 금속간화합물 성장 관찰과 두께 측정 50
4.5 확산계수 결정 54
제 5 장 결과 및 고찰 55
5.1 시간 및 전류 변화에 따른 금속간화합물 성장 관찰 58
5.2 시간 및 전류 변화에 따른 금속간화합물 두께 측정 61
5.3 확산계수 결정 63
5.4 Simulation vs. Experiment 66
제 6 장 결론 68
참고문헌 71
Abstract 72

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