Screen printing has been widely used to form the electrode for crystalline silicon solar cells. However, it has caused high resistance and low aspect ratio, resulting in decreased conversion efficiency in c-Si solar cells. On the other hand, Ni/Cu/Ag plating method can be applied to the silicon solar cells to reduce the resistance and improve the efficiency. In this paper, we investigated the effect of Ni/Cu/Ag plating on the electrical properties, compared with screen printing method. The solar cells were fabricated with 6″, 200㎛, ρ=0.5 to 3.0Ω·cm and p-type c-Si wafer. All wafers were textured, doped, anti-reflection coated, laser patterned and rear Al screen printed, followed by firing. Before laser patterning, phosphoric acid layer was spin-coated to prevent damage caused by laser and this process formed a selective emitter structure by P dopant of the phosphoric acid layer. As a result, the contact resistance was reduced due to lower sheet resistance. Low sheet resistance could be obtained by increasing laser power, but efficiency and Voc were decreased because of damage to the wafer. The optimized laser power was 29A, speed and frequency were 300mm/s and 60kHz, sheet resistance was measured at 60~70Ω/sq, which is lower than 80Ω/sq of conventional resistance. Another problem with plating process is ghost plating issue. Ghost plating occurred in the non-metallized region, resulting from pin-hole in the single layer anti-reflection coating of silicon nitride (SiNx). It resulted in increase of recombination velocity on the front surface and decrease of Voc. To solve ghost-plating issue, double layer anti-reflection coating was applied to the structure to reduce the pin-holes and ultimately ghost-plating. Various double layers such as SiNx(80nm), SiNx/SiNx(40/40nm), SiO2/SiNx(15/80nm), SiNx/SiOx(80/100nm) were deposited by thermal oxidation and PECVD. Refractive index of the silicon nitride and silicon oxide were 2.0 and 1.46, reflectance showed similar result like as 2.6 to 3.8% between various layers. Also, ghost plating was SiO2/SiNx double layer was deposited. Metallization of the front electrode was performed by Ni/Cu/Ag plating, the efficiency was best when Ni and Cu were plated for each 4 minutes and 16 minutes. Finally, very thin layer of Ag was plated to Ni/Cu electrode for 30 seconds to prevent oxidation of the electrode, its thickness was about 1㎛. From the optimized plating condition, we could obtain lower contact resistance and more absorption of light, compared with screen printing solar cells. The electrical properties were improved as ΔJsc = 0.38 mA/cm2 and ΔEff = 0.1 %, but Voc was lower as 5mV than conventional screen printing solar cells because Voc was decreased due to the damage by laser process. Therefore, if the condition will be further optimized, higher efficiency can be expected for crystalline silicon solar cells.