지원사업
학술연구/단체지원/교육 등 연구자 활동을 지속하도록 DBpia가 지원하고 있어요.
커뮤니티
연구자들이 자신의 연구와 전문성을 널리 알리고, 새로운 협력의 기회를 만들 수 있는 네트워킹 공간이에요.
논문 기본 정보
- 자료유형
- 학위논문
- 저자정보
- 지도교수
- 이성현
- 발행연도
- 2016
- 저작권
- 한국외국어대학교 논문은 저작권에 의해 보호받습니다.
이용수2
이 논문의 연구 히스토리 (2)
- 이 논문의 후속연구가 궁금하신가요?
- 연관 학술논문 또는 학술발표를 통해 보다 발전된 연구결과를 확인하실 수 있습니다.
- 이 논문의 연구 히스토리 확인하기
초록· 키워드
오류제보하기
Model Parameter Extraction and Improved Output Admittance SPICE Modeling for RF MOSFETs
For the first time, it is revealed that the physical origin of gate-source voltage dependent drain-source capacitance in short-channel MOSFETs comes from the depletion capacitance components between drain and channel end in the saturation region. Based on this origin, it is newly found that dependent channel resistance should be connected in series with the to model the high-frequency response of the intrinsic output capacitance. The accuracy of an improved MOSFET model including the is validated by observing excellent agreement with measured -parameters in the wide range of up to 40GHz. An improved MOSFET output admittance equivalent circuit model with a channel impedance block for AC current crowding effect and its direct parameter extraction method are developed to reduce the -parameter error of a conventional model in the high frequency region. Its accuracy is validated by finding the much better agreement up to 40GHz between the measured and modeled -parameter than the conventional one. An accurate large-signal BSIM4 macro model including new empirical bias-dependent equations of the and constructed from bias-dependent data extracted from -parameters of RF MOSFETs is developed to reduce -parameter error of a conventional BSIM4 model. Its accuracy is validated by finding the much better agreement up to 40GHz between the measured and modeled -parameter than the conventional one in the wide bias range.
For the first time, it is revealed that the physical origin of gate-source voltage dependent drain-source capacitance in short-channel MOSFETs comes from the depletion capacitance components between drain and channel end in the saturation region. Based on this origin, it is newly found that dependent channel resistance should be connected in series with the to model the high-frequency response of the intrinsic output capacitance. The accuracy of an improved MOSFET model including the is validated by observing excellent agreement with measured -parameters in the wide range of up to 40GHz. An improved MOSFET output admittance equivalent circuit model with a channel impedance block for AC current crowding effect and its direct parameter extraction method are developed to reduce the -parameter error of a conventional model in the high frequency region. Its accuracy is validated by finding the much better agreement up to 40GHz between the measured and modeled -parameter than the conventional one. An accurate large-signal BSIM4 macro model including new empirical bias-dependent equations of the and constructed from bias-dependent data extracted from -parameters of RF MOSFETs is developed to reduce -parameter error of a conventional BSIM4 model. Its accuracy is validated by finding the much better agreement up to 40GHz between the measured and modeled -parameter than the conventional one in the wide bias range.
목차
Ⅰ. 서론 11.1. 최근 동향 및 연구의 중요성 11.2. 기존 벌크모델 및 BSIM4 SPICE 모델의 문제점 21.3. 본 연구의 범위 3Ⅱ. 패드 및 금속배선 de-embedding 4Ⅲ. RF MOSFET의 내부 출력 등가회로 모델링 83.1. Drain-source 캐패스턴스와 채널저항 직접 추출방법 83.2. 새로운 모델의 -파라미터 비교 18Ⅳ. RF MOSFET의 개선된 출력 어드미턴스 모델링 194.1. 모델 파라미터 추출 194.2. 추출 정확성 검증 23Ⅴ. RF MOSFET의 대신호 출력 등가회로 모델링 255.1. 전압종속 drain-source 캐패시턴스와 채널저항 SPICE 모델링 255.2. 새로운 모델의 정확도 분석 31Ⅵ. 결론 34참고 문헌 36Abstract 38
최근 본 자료
댓글(0)
0