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- 학위논문
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- 지도교수
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- 2017
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300nm-thinck Ge2Sb2Te5 thin films were in-situ deposited at different temperatures by RF magnetron sputtering. And their thermoelectric properties were measured at room temperature. The highest power factor of 1.1 × 10-3W/K2m was obtained by Seebeck coefficient(194.3μV/K) and conductivity (303 ohm/cm) of the film deposited at 250 ℃, which has the mixture phase of FCC and HCP. And the moderate degree of electrical conductivity and the Seebeck coefficient in the GST film deposited at 250oC lead to the highest ZT value of nearly 2.0. In order to explain giant ZT value, the crystal structure, the electrical parameters and the chemical composition were investigated.
The chalcogenide based thin film thermoelectric generators were fabricated with p-type Ge2Sb2Te5 (p-GST) and n-type Bi2Te3 (n-BT) thin films which consist of 5pairs of legs connected by Ti/Au(100nm) electrodes. The n-type Bi2Te3 materials are well known as the best material for thermoelectric application at room temperature. To demonstrate power generation, one side of heating pad was heated and the exact temperature differences of device on both side of electrodes were verified visually with FLIR infrared camera. Then we measured output voltage and estimated output power by internal resistance of thin film thermoelectric generator. The highest output voltages of 0.3 mm- and 1.0 mm-thick n-BT/ p-GST thermoelectric generators were approximately 18.7 and 30.5 mV at ΔT = 12 K, respectively. And also estimated maximum output powers were 4.1 and 52.9 nW, respectively. They showed higher values than those of referenced n-BT/ p-Bi0.5Sb1.5Te3 (BST) thermoelectric generators.
The chalcogenide based thin film thermoelectric generators were fabricated with p-type Ge2Sb2Te5 (p-GST) and n-type Bi2Te3 (n-BT) thin films which consist of 5pairs of legs connected by Ti/Au(100nm) electrodes. The n-type Bi2Te3 materials are well known as the best material for thermoelectric application at room temperature. To demonstrate power generation, one side of heating pad was heated and the exact temperature differences of device on both side of electrodes were verified visually with FLIR infrared camera. Then we measured output voltage and estimated output power by internal resistance of thin film thermoelectric generator. The highest output voltages of 0.3 mm- and 1.0 mm-thick n-BT/ p-GST thermoelectric generators were approximately 18.7 and 30.5 mV at ΔT = 12 K, respectively. And also estimated maximum output powers were 4.1 and 52.9 nW, respectively. They showed higher values than those of referenced n-BT/ p-Bi0.5Sb1.5Te3 (BST) thermoelectric generators.
목차
Ⅰ. 서 론 1Ⅱ. 이론적 배경 3Ⅱ-1. 열전효과 3Ⅱ-2. 열전소재 5Ⅱ-2-1. 열전성능지수 (ZT) 5Ⅱ-2-2. 열전소재 연구현황 6Ⅱ-2-3. 나노구조화에 의한 ZT향상 9Ⅱ-3. 열전발전모듈 13Ⅱ-4. Ge2Sb2Te5 물질의 특성 14Ⅱ-3-1. Chalcogenide계 물질의 특성 14Ⅱ-3-2. Ge2Sb2Te5 의 특성 14Ⅲ. 실험 방법 16Ⅲ-1. Ge2Sb2Te5 박막의 증착 (RF sputtering) 16Ⅲ-2. 열전특성 측정방법 18Ⅲ-2-1. Seebeck measurement system 18Ⅲ-2-2. 3-ω method 20Ⅳ. 결과 및 고찰 22Ⅳ-1. 결정구조 변화에 따른 Ge2Sb2Te5 박막의 열전특성 22Ⅳ-1-1. Ge2Sb2Te5 박막의 결정성 22Ⅳ-1-2. 증착온도에 따른 조성변화 28Ⅳ-1-3. Ge2Sb2Te5 박막의 열전특성평가 30Ⅳ-1-4. Ge2Sb2Te5 박막의 열전도도 37Ⅳ-1-5. Ge2Sb2Te5 박막의 열전성능지수 (ZT) 39Ⅳ-2. Ge2Sb2Te5 박막을 이용한 열전소자 41Ⅳ-2-1. 박막 열전소자 제작 41Ⅳ-2-2. 즉정시스템 46Ⅳ-2-3. 박막 열전소자의 성능 평가 48Ⅴ. 결 론 52Ⅵ. 참고문헌 53
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