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논문 기본 정보
- 자료유형
- 학위논문
- 저자정보
- 지도교수
- 박재근
- 발행연도
- 2018
- 저작권
- 한양대학교 논문은 저작권에 의해 보호받습니다.
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CMP, a chemical mechanical planarization process, is an indispensable process for securing the depth of focus (DOF) for multiple interconnect layers and patterns in semiconductor processes. This study is to increase the selectivity of SiO2 to poly-Si in poly-Si stop CMP during NAND flash memory manufacturing process to reduce dishing and increase DOF margin.
Ceria slurry was prepared by adding anionic polymer, nonionic polymer and cationic polymer respectively to polyethylene oxide (PEO) which is a nonionic surfactant in order to conduct CMP experiments. Through this CMP experiment, it was found that the selectivity was significantly increased when the anionic polymer was added, and the FTIR measurements was conducted to analyze the mechanism of the cause. The FTIR spectra analysis confirmed that PEO and anionic polymer form an interpolymer complex, which leads to an increase in the selectivity.
Ceria slurry was prepared by adding anionic polymer, nonionic polymer and cationic polymer respectively to polyethylene oxide (PEO) which is a nonionic surfactant in order to conduct CMP experiments. Through this CMP experiment, it was found that the selectivity was significantly increased when the anionic polymer was added, and the FTIR measurements was conducted to analyze the mechanism of the cause. The FTIR spectra analysis confirmed that PEO and anionic polymer form an interpolymer complex, which leads to an increase in the selectivity.
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