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4차 산업 시대를 맞이하여 5G 통신의 발달과 더불어 전파 송수신이 고주파수 대역 (GHz)을 사용하는 전자기기의 사용이 증가하며, 집적화된 전자기기가 늘어남에 따라 전자파 노이즈(Noise)가 발생하여 기기 오작동의 원인이 되고 있다. 전자파 차폐 (Shielding)는 노이즈로 인한 전자 부품의 오작동을 방지하는 중요한 기술로 대두되었 으며, 전자파 차폐 및 흡수 소재에 대한 관심 또한 높아졌다. 대표적인 전자파 차폐 소재인 금속은 높은 전기 전도성 및 열 전도성의 특성이 있어 우수한 전자파 차폐효 율을 가지므로, 고주파 영역(GHz)의 전자파 차폐 소재로 많이 사용된다. 그러나 전자 파 차폐 소재로 사용하기에 금속은 무겁고 두꺼워 전자소자들의 집적화 및 경량화 트 렌드의 직접적으로 사용하기에 제한이 있으며, 부식에도 취약하여 보호층이 필요하다 는 단점이 있다. 일반적으로 전자파 차폐 재료로 직접적인 사용보다 다층의 복합체나 코팅제 내에 금속이 삽입되는 형태로 사용하며, 열 전도성 특성을 활용하여 다기능성 을 주어 단점을 극복하고자 방열 특성이 우수한 전자파 차폐막에 대한 연구가 주로 이루어지고 있다.
본 연구에서는 마그네트론 스퍼터링으로 우수한 내부식 특성을 가지는 Zn-Ni 합금 박막을 다양한 조성범위에서 증착하여, 합금 조성이 상형성, 전자파 차폐/흡수 특성 및 내부식 특성에 미치는 영향에 대해 연구하였다. 조성에 따른 각 샘플의 두께와 표 면상태 및 조성은 SEM과 EDS를 통하여 관찰하였으며, XRD 통해 상형성을 확인하였 다. 박막의 표면 저항을 4 Point probe 방법으로 측정하여 박막의 면저항을 통해 계 산하여 원역장에서의 전자파 차폐율을 간접적으로 측정했다. 또한, 실제 전자파 차폐/ 흡수율은 주파수영역대를 원역장과 근접장으로 나눠 측정하였으며, 원역장의 전자파 차폐율의 실제 측정값과 면저항을 통한 계산 값을 비교했다. 내식성은 분극 시험을 통해 평가하였다.
그 결과 Zn 50 ~ 57 at% 에서 Ni5Zn21상이 주된 상으로 성장함을 확인하였다. Zn 60 ~ 70 at%에서는 NiZn, Ni5Zn21의 혼합상으로 존재하며 Zn이 증가함에 따라 NiZn상이 우세하게 성장하였다. 원역장 영역에서의 전자파 차폐/흡수율은 Zn의 함량이 증가함에 따라 전자파 차폐/흡수율이 증가하는 거동을 나타내었으며, 면저항을 통해 계산한 전 자파 차폐율에서는 최대 약 52 dB, 실제 원역장에서 측정한 전자파 차폐/흡수율의 최 댓값인 약 42 dB을 확인 할 수 있었다. 면저항을 통해 계산된 전자파 차폐율과 실제 측정치는 전체적으로 조성에 따라 같은 경향성을 보여 비교적 측정이 쉬운 면저항 측 정을 통해 전자파 차폐/흡수율의 예측이 가능함을 확인하였다. 근접장 영역에서의 전 력흡수율의 경우 원역장 영역에서와 달리 Ni5Zn21상이 가장 많이 형성된 것으로 보이 는 Zn 57 at% 샘플에서 가장 높은 특성을 보여주었다. 또한, 동전위분석결과 Zn의 함 량이 감소할수록 내부식 특성 향상되었으며, Ni5Zn21상이 많이 형성된 Zn-Ni 합금에서 NiZn상 우세한 Zn-Ni 합금보다 우수한 내부식 특성을 보인다고 사료된다. 따라서, 근 접장/원역장의 전자파 차폐/흡수 및 내부식특성을 고려했을 경우 Zn-Ni 합금박막에서 Zn 57%의 조성이 전자부품용으로 사용 시 최적의 조성조건으로 판단된다.
본 연구에서는 마그네트론 스퍼터링으로 우수한 내부식 특성을 가지는 Zn-Ni 합금 박막을 다양한 조성범위에서 증착하여, 합금 조성이 상형성, 전자파 차폐/흡수 특성 및 내부식 특성에 미치는 영향에 대해 연구하였다. 조성에 따른 각 샘플의 두께와 표 면상태 및 조성은 SEM과 EDS를 통하여 관찰하였으며, XRD 통해 상형성을 확인하였 다. 박막의 표면 저항을 4 Point probe 방법으로 측정하여 박막의 면저항을 통해 계 산하여 원역장에서의 전자파 차폐율을 간접적으로 측정했다. 또한, 실제 전자파 차폐/ 흡수율은 주파수영역대를 원역장과 근접장으로 나눠 측정하였으며, 원역장의 전자파 차폐율의 실제 측정값과 면저항을 통한 계산 값을 비교했다. 내식성은 분극 시험을 통해 평가하였다.
그 결과 Zn 50 ~ 57 at% 에서 Ni5Zn21상이 주된 상으로 성장함을 확인하였다. Zn 60 ~ 70 at%에서는 NiZn, Ni5Zn21의 혼합상으로 존재하며 Zn이 증가함에 따라 NiZn상이 우세하게 성장하였다. 원역장 영역에서의 전자파 차폐/흡수율은 Zn의 함량이 증가함에 따라 전자파 차폐/흡수율이 증가하는 거동을 나타내었으며, 면저항을 통해 계산한 전 자파 차폐율에서는 최대 약 52 dB, 실제 원역장에서 측정한 전자파 차폐/흡수율의 최 댓값인 약 42 dB을 확인 할 수 있었다. 면저항을 통해 계산된 전자파 차폐율과 실제 측정치는 전체적으로 조성에 따라 같은 경향성을 보여 비교적 측정이 쉬운 면저항 측 정을 통해 전자파 차폐/흡수율의 예측이 가능함을 확인하였다. 근접장 영역에서의 전 력흡수율의 경우 원역장 영역에서와 달리 Ni5Zn21상이 가장 많이 형성된 것으로 보이 는 Zn 57 at% 샘플에서 가장 높은 특성을 보여주었다. 또한, 동전위분석결과 Zn의 함 량이 감소할수록 내부식 특성 향상되었으며, Ni5Zn21상이 많이 형성된 Zn-Ni 합금에서 NiZn상 우세한 Zn-Ni 합금보다 우수한 내부식 특성을 보인다고 사료된다. 따라서, 근 접장/원역장의 전자파 차폐/흡수 및 내부식특성을 고려했을 경우 Zn-Ni 합금박막에서 Zn 57%의 조성이 전자부품용으로 사용 시 최적의 조성조건으로 판단된다.
목차
Ⅰ. 서론 ············································································································································ 1Ⅱ. 이론적 배경 ······························································································································ 32.1 Zn-Ni Alloy Film ··················································································································· 32.2 스퍼터링(Sputtering) ·········································································································· 62.2.1 Dc Sputtering 법 ··········································································································· 72.2.2 마그네트론 스퍼터링(Magnetron Sputtering) ······················································· 112.2.3 스퍼터율(Sputter yield) ······························································································ 122.3 박막 성장 원리 ···················································································································· 172.4 전자파 차폐/흡수 ················································································································ 222.4.1 전자파(Electro-Magnetic wave) ················································································ 222.4.2 전자파 차폐/흡수 원리 ······························································································· 262.4.3 전자파 차폐 금속 소재 ······························································································· 322.5 부식과 분극곡선 ················································································································ 33Ⅲ. 실험 방법 ································································································································ 373.1 Zn-Ni 합금 박막 증착(마그네트론 스퍼터링) ······························································· 373.2 박막 구조 및 성분 분석(SEM/EDS/XRD) ······································································· 383.3 전자파 차폐/흡수 특성 분석 ···························································································· 393.3.1 표면저항 측정을 통한 차폐율 계산(4 Point-probe) ············································ 393.3.2 전자파 차폐/흡수 실제 측정 ····················································································· 423.3.2.1 근역장 측정방법(Micro-Strip Line, MSL) ························································· 423.3.2.2 원역장 측정방법(ASTM D-4935) ····································································· 443.4 내식성 분석 ·························································································································· 46Ⅳ. 실험결과 ·································································································································· 474.1 Zn-Ni 합금 박막의 구조 및 상 분석 결과 ··································································· 474.2 근접장 전자파 흡수율 측정결과 ······················································································ 504.3 원역장 전자파 차폐/흡수율 측정결과 ············································································ 534.3.1 면저항을 통한 전자파 차폐 측정 ············································································· 534.3.2 실제 전자파 차폐율 측정(ASTM D-4935) ································································ 554.3.2 면저항을 통한 계산값과 실제 측정값 비교 ····························································· 584.4 분극시험 결과 ························································································································ 59Ⅴ. 결론 ·········································································································································· 62참고문헌 ········································································································································· 64Abstract ·········································································································································· 69
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