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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- Korean Institute of Information Scientists and Engineers Journal of Electrical Engineering and Information Science Journal of Electrical Engineering and Information Science Vol.3 No.5
- 발행연도
- 1998.10
- 수록면
- 625 - 630 (6page)
이용수
초록· 키워드
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In the present work, a new attempt was made to develop comparatively high voltage and optically-activated gold-compensated silicon p-i-n diodes with a V-groove structure. The devices exhibited a switching voltage up to 600 V, with switching current less than 100 μ A. They also showed full control of switching characteristic with a low optical power. The switching voltage, the turn-on delay time. and the turn-on rise time were measured as a function of optical power level, bias, and pulse width. The measured switching voltage decreased rapidly when the illumination level was increased. The turn-on characteristics showed a strong dependence on an optical pulse power, but a weaker dependence on the width of optical pulse. The turn-off delay was negligible and the fall time was less than 0.03 μs.
목차
Abstract
Ⅰ. Introduction
Ⅱ. Experimental
Ⅲ. Static Characteristics of Optical Switching
Ⅳ. Optical Transient Switching Characteristics
Ⅴ. Conclusions
References
저자소개
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