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A Study on Temperature Dependence of Tunneling Magnetoresistance on Plasma Oxidation Time and Annealing Temperature
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플라즈마 산화시간과 열처리 조건에 따른 터널링 자기저항비의 온도의존특성에 관한 연구

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Type
Academic journal
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Journal
The Korean Magnetics Society Journal of the Korean Magnetics Society Vol.14 No.3 KCI Accredited Journals
Published
2004.6
Pages
99 - 104 (6page)

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A Study on Temperature Dependence of Tunneling Magnetoresistance on Plasma Oxidation Time and Annealing Temperature
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We have studied to understand the barrier and interface qualities and structural changes through measuring temperature dependent spin-polarization as functions of plasma oxidation time and annealing time. Magnetic tunnel junctions consisting of SiO₂/Ta 5/CoFe 17/IrMn 7.5/CoFe 5/Al 1.6-Ox/CoFe 5/Ta 5 (numbers in ㎚) were deposited and annealed when necessary. A 30 s, 40 s oxidized sample showed the lowest spin-polarization values. It is presumed that tunneling electrons were depolarized and scattered by residual paramagnetic Al due to under-oxidation. On the contrary, a 60 s, 70 s oxidized sample might have experienced over-oxidation, where partially oxidized magnetic dead layer was formed on top of the bottom CoFe electrode. The magnetic dead layer is known to increase the probability of spin-flip scattering. Therefore it showed a higher temperature dependence than that of the optimum sample (50 s oxidation). Temperature dependence of 450 K annealed samples was improved when the as-deposited one compared. But the sample underwent 475 K and 500 K annealing exhibits inferior temperature dependence of spin-polarization, indicating that the over-annealed sample became microstructurally degraded.

Contents

국문초록

Ⅰ. 서론

Ⅱ. 실험방법

Ⅲ. 결과 및 고찰

Ⅳ. 결론

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[학술지(정기간행물)] - M. Julliere / 1975 / Phys. Lett. 54A 225 google schola

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