지원사업
학술연구/단체지원/교육 등 연구자 활동을 지속하도록 DBpia가 지원하고 있어요.
커뮤니티
연구자들이 자신의 연구와 전문성을 널리 알리고, 새로운 협력의 기회를 만들 수 있는 네트워킹 공간이에요.
초록· 키워드
오류제보하기
We studied p-type capacitance characteristics of ZnO thin-film transistors (TFT’s), grown by metal organic chemical vapor deposition (MOCVD). We compared two ZnO TFT’s: one grown at 450℃ and the other grown at 350℃. ZnO grown at 450℃ showed smooth capacitance profile with electron density of 1.5 × 10<SUP>20</SUP> cm<SUP>-3</SUP>. In contrast, ZnO grown at 350℃ showed a capacitance jump when gate voltage was changed to negative voltages. Current-voltage characteristics measured in the two samples did not show much difference. We explain that the capacitance jump is related to p-type ZnO layer formed at the SiO<SUB>2</SUB> interface. Current-voltage and capacitance-voltage data support that p-type characteristics are observed only when background electron density is very low.
목차
Abstract
1. Introduction
2. Experimental Results
3. Conclusions
Acknowledgements
References
참고문헌 (12)
참고문헌 신청
1. [학술지(정기간행물)] - K. Miyamoto / 2002 / Effects of ZnO/MgO Double Buffer Layers onStructural Quality and Electron Mobility of ZnOEpitaxial Films Grown on c-Plane Sapphire / Jpn J.Appl. Phys 41 : L1203 ~ L1205
2. [학술지(정기간행물)] - A. Tsukazaki / 2005 / Blue Light-Emitting Diode Based on ZnO / Jpn J. Appl. Phys 44 : L643 ~ L645
3. [학술지(정기간행물)] - H. Q. Chiang / 2005 / High Mobility Transparent Thin-Film Transistors with Amorphous Zinc Tin Oxide Channel Layer / Appl. Phys. Lett 86 : 13503 ~
4. [학술지(정기간행물)] - K. Nomura / 2004 / Room-temperature Fabrication of Transparent Flexible Thin-Film Transistors Using Amorphous Oxide Semiconductors / Nature 432 : 488 ~ 492
5. [학술지(정기간행물)] - J. Jo / 2007 / Effect of Hydrogen in Zinc Oxide Thin-Film Transistor Grown by Metal Organic Chemical Vapor Deposition / Jpn J. Appl. Phys 46 : 2493 ~ 2495
2. [학술지(정기간행물)] - A. Tsukazaki / 2005 / Blue Light-Emitting Diode Based on ZnO / Jpn J. Appl. Phys 44 : L643 ~ L645
3. [학술지(정기간행물)] - H. Q. Chiang / 2005 / High Mobility Transparent Thin-Film Transistors with Amorphous Zinc Tin Oxide Channel Layer / Appl. Phys. Lett 86 : 13503 ~
4. [학술지(정기간행물)] - K. Nomura / 2004 / Room-temperature Fabrication of Transparent Flexible Thin-Film Transistors Using Amorphous Oxide Semiconductors / Nature 432 : 488 ~ 492
5. [학술지(정기간행물)] - J. Jo / 2007 / Effect of Hydrogen in Zinc Oxide Thin-Film Transistor Grown by Metal Organic Chemical Vapor Deposition / Jpn J. Appl. Phys 46 : 2493 ~ 2495
이 논문의 저자 정보
이 논문과 함께 이용한 논문
최근 본 자료
댓글(0)
0
UCI(KEPA) : I410-ECN-0101-2013-560-002862784