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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 대한전기학회 Journal of Electrical Engineering & Technology Journal of Electrical Engineering & Technology Vol.7 No.4
- 발행연도
- 2012.7
- 수록면
- 601 - 605 (5page)
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초록· 키워드
오류제보하기
Insulated Gate Bipolar Transistors(IGBTs) have received wide attention because of their high current conduction and good switching characteristics. To reduce the power loss of IGBT, the onstate voltage drop should be lowered and the switching time should be shortened. However, there is trade-off between the breakdown voltage and the on-state voltage drop. The FLoatingIsland(FLI) structure can lower the on-state voltage drop without reducing breakdown voltage. In this paper, The FLI IGBT shows an on-state voltage drop that is 22.5% lower than the conventional IGBT, even though the breakdown voltages of each IGBT are almost identical.
목차
Abstract
1. Introduction
2. Theoretical Analysis and Simulation of FLI Structure
3. Conclusion
Acknowledgment
References
참고문헌 (5)
참고문헌 신청
1. [학술지(정기간행물)] - 강이구 / 2010 / 내압특성개선을 위한 트렌치 필드링 설계 및 전기적특성에 관한 연구 / 전기전자재료학회논문지 23 (1) : 1 ~ 5
2. [학술지(정기간행물)] - Y. I. Choi / 1997 / / J. KIEE 46 (2)
3. [단행본] - B. J. Baliga / 2008 / Fundamentals of power semiconductor devices / Springer
4. [단행본] - B. J. Baliga / 1996 / Power semiconductor devices / PWS Publishing Company
5. [학술대회논문] - N. Cezac / 2000 / A new generation of power unipolar devices : the concept of the FLoating Island MOS Transistor(FLIMOST) / ISPSD
2. [학술지(정기간행물)] - Y. I. Choi / 1997 / / J. KIEE 46 (2)
3. [단행본] - B. J. Baliga / 2008 / Fundamentals of power semiconductor devices / Springer
4. [단행본] - B. J. Baliga / 1996 / Power semiconductor devices / PWS Publishing Company
5. [학술대회논문] - N. Cezac / 2000 / A new generation of power unipolar devices : the concept of the FLoating Island MOS Transistor(FLIMOST) / ISPSD
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