지원사업
학술연구/단체지원/교육 등 연구자 활동을 지속하도록 DBpia가 지원하고 있어요.
커뮤니티
연구자들이 자신의 연구와 전문성을 널리 알리고, 새로운 협력의 기회를 만들 수 있는 네트워킹 공간이에요.
논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 대한전자공학회 JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE Journal of Semiconductor Technology and Science Vol.19 No.2
- 발행연도
- 2019.4
- 수록면
- 190 - 195 (6page)
- DOI
- 10.5573/JSTS.2019.19.2.190
이용수
초록· 키워드
오류제보하기
Integration of graphene with Si-based semiconductor materials, which are core-materials in complementary metal oxide semiconductor (CMOS) technology, is desirable. To date, the synergistic effects of various graphene-semiconductor hybrid systems have been shown to overcome various physical limitations of graphene and semiconductors. However, the graphene utilized in most previous studies was synthesized over a metal catalyst and required additional transfer processes that could generate irreversible physical defects and chemical contamination. Although direct synthesis of graphene on Si or Ge has been developed, research into graphene growth using silicon-germanium (SiGe) as a catalyst remains in its infancy. This is despite expectations that this method would be highly applicable to next-generation CMOS applications. Herein, we demonstrate the direct growth of graphene on a SiGe surface using a conventional chemical vapor deposition method. Optical microscopy, electron microscopy, and Raman spectroscopy were used to confirmed that the graphene was uniformly synthesized over the entire substrate. The advantages of CMOS-compatible graphene growth and high crystallinity of the synthesized graphene will provide opportunities for novel graphene-SiGe hybrid system development and next-generation CMOS technology.
목차
Abstract
Ⅰ. INTRODUCTION
Ⅱ. EXPERIMENTAL
Ⅲ. RESULTS AND DISCUSSION
Ⅴ. CONCLUSIONS
REFERENCES
참고문헌 (16)
참고문헌 신청
K. S. Novoselov et al., “Electric field effect in atomically thin films” Science, Vol. 306, No. 5696, pp. 666-669, Oct. 2004.
C. Berger et al., “Electronic confinement and coherence in patterned epitaxial graphene” Science, Vol. 312, No. 5777, pp. 1191?1196, May 2006.
G. Eda et al., “Large-area ultrathin films of reduced graphene oxide as a transparent and flexible electronic material” Nature Nanotechnology, Vol. 3, No. 5, pp. 270?274, May 2008.
X. Li et al., “Large-area synthesis of high-quality and uniform graphene films on copper foils” Science Vol. 324, No. 5932, pp. 1312?1314, Jun. 2009.
K. S. Kim et al., “Large-scale pattern growth of graphene films for stretchable transparent electrodes” Nature, Vol. 457, No. 7230, pp. 706? 710, Feb. 2009.
C. Berger et al., “Electronic confinement and coherence in patterned epitaxial graphene” Science, Vol. 312, No. 5777, pp. 1191?1196, May 2006.
G. Eda et al., “Large-area ultrathin films of reduced graphene oxide as a transparent and flexible electronic material” Nature Nanotechnology, Vol. 3, No. 5, pp. 270?274, May 2008.
X. Li et al., “Large-area synthesis of high-quality and uniform graphene films on copper foils” Science Vol. 324, No. 5932, pp. 1312?1314, Jun. 2009.
K. S. Kim et al., “Large-scale pattern growth of graphene films for stretchable transparent electrodes” Nature, Vol. 457, No. 7230, pp. 706? 710, Feb. 2009.
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