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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국전기전자재료학회 Transactions on Electrical and Electronic Materials Transactions on Electrical and Electronic Materials 제5권 제6호
- 발행연도
- 2004.1
- 수록면
- 224 - 227 (4page)
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초록· 키워드
오류제보하기
The PZT thin films are one of well-known materials that has been widely studied for ferroelectric random access memory (FRAM). We etched the PZT thin films by CF4/(Cl2+Ar) plasma and investigated improvement in etching damage by O2 annealing. The maximum etch rate of the PZT thin films was 157 nm/min and that the selectivity of the PZT thin films to Pt was 3.1 when CF4 (30 %) was added to a Cl2 (80 %)/Ar (20 %) gas mixing ratio. To improve the ferroelectric properties of PZT thin films after etching, the samples were annealed for 10 min at various temperatures in O2 atmosphere. After O2 annealing, the remanent polarization of the as-deposited films was 34.6 mC/cm2 and the sample annealed at 650, 550, and 450 °C was 32.8, 22.3, and 18.6 mC/cm2, respectively. PZT thin films with O2 annealing at 450 °C retained 77 % of their original polarization at 106 cycles. Also as the annealing temperature increased, the fatigue properties improved. And the leakage current was decreased gradually and almost recovered to the as-deposited value after the annealing at 650 °C.
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참고문헌 (12)
참고문헌 신청
/ 1985. / Sol-gel processing of PbTiO3 36 : 107 ~
/ 1989. / Preparation of epi-taxial Pb 65 : 1666 ~
/ 1991. / Microstructural developments and dielectric properties of rapid thermally processed PZT thin films derived by metallo-organic decomposition 78 : 1617 ~
/ 1994. / Control of orientation of Pb 33 : 5167 ~
/ 1994. / Reactive ion etching of Pb O3 and RuO2 films by environmentally safe gases 9 : 2976 ~
/ 1989. / Preparation of epi-taxial Pb 65 : 1666 ~
/ 1991. / Microstructural developments and dielectric properties of rapid thermally processed PZT thin films derived by metallo-organic decomposition 78 : 1617 ~
/ 1994. / Control of orientation of Pb 33 : 5167 ~
/ 1994. / Reactive ion etching of Pb O3 and RuO2 films by environmentally safe gases 9 : 2976 ~
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PZT박막 Capacitor에 관한 기초연구(I)
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Preparation of Low-Tomperature Fired PZT Thick Films on Si by Screen Printing
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PZT(5/95)PZT(95/5) 이종층 박막의 코팅횟수에 따른 구조적 특성
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Effect of Dry Process on Dielecrtic properties of PZT Thin Films Prepared by Sol-Gel Process
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