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학술연구/단체지원/교육 등 연구자 활동을 지속하도록 DBpia가 지원하고 있어요.
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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국진공학회(ASCT) Applied Science and Convergence Technology Applied Science and Convergence Technology Vol.25 No.4
- 발행연도
- 2016.7
- 수록면
- 81 - 84 (4page)
이용수
초록· 키워드
오류제보하기
InP/InGaP quantum structures (QSs) grown on GaAs substrates by a migration-enhanced molecular beam epitaxy method were studied as a function of growth temperature (T) using photoluminescence (PL) and emissionwavelength-dependent time-resolved PL (TRPL). The growth T were varied from 440℃ to 520℃ for the formation of InP/InGaP QSs. As growth T increases from 440℃ to 520℃, the PL peak position is blue-shifted, the PL intensity increases except for the sample grown at 520℃, and the PL decay becomes fast at 10 K. Emission-wavelengthdependent TRPL results of all QS samples show that the decay times at 10 K are slightly changed, exhibiting the longest time around at the PL peak, while at high T, the decay times increase rapidly with increasing wavelength, indicating carrier relaxation from smaller QSs to larger QSs via wetting layer/barrier. InP/InGaP QS sample grown at 460℃ shows the strongest PL intensity at 300 K and the longest decay time at 10 K, signifying the optimum growth T of 460℃.
목차
Abstract
Ⅰ. Introduction
Ⅱ. Experimental Details
Ⅲ. Results and Discussion
Ⅳ. Conclusions
References
참고문헌 (14)
참고문헌 신청
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[학술지(정기간행물)] - S. K. Ha / 2011 / High-power 745-nm Laser Diode Utilizing InP/InGaP Quantum Structures Grown by Using Migration Enhanced Epitaxy / Journal of the Korean Physical Society 59 (5) : 3089 ~ 3092
[학술지(정기간행물)] - J. P. Reithmaier / 2005 / / J. Phys. D:Appl. Phys 38 : 2088 ~
[학술지(정기간행물)] - A. Ugur / 2011 / / J. Cryst. Growth 323 : 228 ~
[학술지(정기간행물)] - R. Rödel / 2012 / / Nanotech 23 : 015605 ~
[학술지(정기간행물)] - S. K. Ha / 2011 / High-power 745-nm Laser Diode Utilizing InP/InGaP Quantum Structures Grown by Using Migration Enhanced Epitaxy / Journal of the Korean Physical Society 59 (5) : 3089 ~ 3092
[학술지(정기간행물)] - J. P. Reithmaier / 2005 / / J. Phys. D:Appl. Phys 38 : 2088 ~
[학술지(정기간행물)] - A. Ugur / 2011 / / J. Cryst. Growth 323 : 228 ~
[학술지(정기간행물)] - R. Rödel / 2012 / / Nanotech 23 : 015605 ~
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UCI(KEPA) : I410-ECN-0101-2019-420-001276125