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In this paper, we investigated a subband-specific relationship between electron mobility and photoluminescence (PL) intensity in a modulation-doped In<SUB>0.53</SUB>Ga<SUB>0.47</SUB>As/In<SUB>0.52</SUB>Al<SUB>0.48</SUB>As heterostructure. From the steady-state diffusion model, the temperature-dependent mobility variation was anticipated to be inversely proportional to the PL intensity under lateral diffusion. The subband-mobility ratio fits best with the inverse ratio of the subband-specific PL intensity, especially in the high-temperature region (≥100 K), where the carrier mobility is less influenced by carrier localization using alloy disorder. Furthermore, the localization effects were manifested by an abrupt increase in PL decay time at the vicinity of electron de-trapping temperature, which coincides with abrupt changes in thermally stimulated capacitance.
목차
I. Introduction
II. Experimental Schemes
III. Conclusions
REFERENCES
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