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논문 기본 정보

자료유형
학술저널
저자정보
Jae-Soo Shin (DaeJeon University) Minjoong Kim (DaeJeon University) Je-beom Song (Korea Research Institute of Standards and Science) Nak-gwan Jeong (Korea Research Institute of Standards and Science) Jin-tae Kim (Korea Research Institute of Standards and Science) Ju-Young Yun (Korea Research Institute of Standards and Science)
저널정보
한국진공학회(ASCT) Applied Science and Convergence Technology Applied Science and Convergence Technology Vol.27 No.1
발행연도
2018.1
수록면
9 - 13 (5page)

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초록· 키워드

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Samples of anodic oxide film used in semiconductor and display manufacturing processes were prepared at different electrolyte temperatures to investigate the corrosion resistance. The anodic oxide film was grown on aluminum alloy 6061 by using a sulfuric acid (H₂SO₄) electrolyte of 1.5M at 0℃, 5℃, 10℃, 15℃, and 20℃. The insulating properties of the samples were evaluated by measuring the breakdown voltage, which gradually increased from 0.43 ㎸ (0℃) to 0.52 ㎸ (5℃), 1.02 ㎸ (10℃), and 1.46 ㎸ (15℃) as the electrolyte temperature was increased from 0℃ to 15℃, but then decreased to 1.24 ㎸ (20℃). To evaluate the erosion of the film by fluorine plasma, the plasma erosion and the contamination particles were measured. The plasma erosion was evaluated by measuring the breakdown voltage after exposing the film to CF₄/O₂/Ar and NF₃/O₂/Ar plasmas. With exposure to CF₄/O₂/Ar plasma, the breakdown voltage of the film slightly decreased at 0℃, by 0.41 ㎸; however, the breakdown voltage significantly decreased at 20℃, by 0.83 ㎸. With exposure to NF₃/O₂/Ar plasma, the breakdown voltage of the film slightly decreased at 0℃, by 0.38 ㎸; however, the breakdown voltage significantly decreased at 20℃, by 0. 77 ㎸. In addition, for the entire temperature range, the breakdown voltage decreased more when sample was exposed to NF₃/O₂/Ar plasma than to CF₄/O₂/Ar plasma. The decrease of the breakdown voltage was lower in the anodic oxide film samples that were grown slowly at lower temperatures. The rate of breakdown voltage decrease after exposure to fluorine plasma was highest at 20℃, indicating that the anodic oxide film was most vulnerable to erosion by fluorine plasma at that temperature. Contamination particles generated by exposure to the CF₄/O₂/Ar and NF₃/O₂/Ar plasmas were measured on a real-time basis. The number of contamination particles generated after the exposure to the respective plasmas was lower at 5℃ and higher at 0℃. In particular, for the entire temperature range, about five times more contamination particles were generated with exposure to NF₃/O₂/Ar plasma than for exposure to CF₄/O₂/Ar plasma. Observation of the surface of the anodic oxide film showed that the pore size and density of the non-treated film sample increased with the increase of the temperature. The change of the surface after exposure to fluorine plasma was greatest at 0℃. The generation of contamination particles by fluorine plasma exposure for the anodic oxide film prepared in the present study was different from that of previous aluminum anodic oxide films.

목차

Abstract
Ⅰ. Introduction
Ⅱ. Experimental
Ⅱ. Results and Discussion
Ⅳ. Conclusions
References

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