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The study of In / Si(111) surface by variation of RHEED spot intensity
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RHEED회절점의 강도변화에 따른 In / Si(111)에 대한 연구

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Academic journal
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Journal
The Korean Vacuum Society Applied Science and Convergence Technology Vol.6 No.2 KCI Excellent Accredited Journal SCOPUS
Published
1997.5
Pages
172 - 176 (5page)

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The study of In / Si(111) surface by variation of RHEED spot intensity
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The change of surface structures for the deposition of indium on clean Si(111) surface is investigated as a function of substrate temperature and surface coverage by RHEED. We find that at substrate temperature of 400℃, √3×√3, √31×√31 and 4×1 structures are formed at indium coverages of 0.2, 0.3 and 0.5 ML, respectively. We also find that for the substrate temperature of 300℃, 4×1 structure starts to be formed by 0.2 ML of indium, and the mixed structure of 4×1 and √3×√3is observed for more than 1.0ML. On the other hand, if the indium is deposited on the Si(111)-√3×√3 structure at room temperature, 2×2 and √7×√3 structures are found to form at 0.2 and 0.4 ML, respectively. From the desorption process, the desorption energy of indium in Si √7×√3 structure is observed to be 2.84 eV.

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