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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국진공학회(ASCT) Journal of Korean Vacuum Science & Technology Journal of Korean Vacuum Science & Technology Vol.2 No.1
- 발행연도
- 1998.4
- 수록면
- 37 - 42 (6page)
이용수
초록· 키워드
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Metastable pseudomorphic Ge_(0.06)Si_(0.94) layers grown by molecular-beam-epitaxy on Si(100) were implanted at room temperature with 70 keV BF₂^+ ions to doses of 3×10¹³, 1×10¹⁴, and 2.5×10¹⁴ ㎝-². The samples were subsequently annealed in a vacuum furnace for 30 min periods at 700, 800, and 900℃. Crystalline degradation of the GeSi samples, observed by MeV ⁴He channeling spectrometry, is pronounced by increasing the dose even though the samples implanted to a low-dose of 3×10¹³, ㎝-² do not visibly degrade after annealing. For samples implanted to doses higher than 1×10¹⁴ ㎝-², strain conservation is not achieved after the thermal annealing observed by double crystal x-ray diffractometry, whereas the samples implanted to a low-dose of 3×10¹³ ㎝-² show strain conservation up to an anneal of 800℃ for 30 min. We conclude that at the doping of 70 keV BF₂^+ ions into metastable pseudomorphic Ge_(0.06)Si_(0.94) layers the strain relaxation is enhanced by the implantation-induced damage, and that the strain conservation is only limited to a low-dose range of ~10¹³ ㎝-².
목차
Abstract
Ⅰ. Introduction
Ⅱ. Experiment
Ⅲ. Results and Discussion
Ⅳ. Summary
Acknowledgments
References
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