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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국진공학회(ASCT) Journal of Korean Vacuum Science & Technology Journal of Korean Vacuum Science & Technology Vol.3 No.2
- 발행연도
- 1999.10
- 수록면
- 130 - 133 (4page)
이용수
초록· 키워드
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Paraelectric ZrTiO₄ thin films were synthesized on a Si (100) substrate using DC magnetron reactive sputtering. Films deposited above 400℃ exhibited crystalline characteristics. The dielectric constants (ε) and dielectric losses (tan δ) of as-deposited and annealed films were measured in the 1 ㎒ range using a Pt upper electrode and a phosphorous-doped Si bottom electrode. Preliminary data showed that as the deposition temperature increased, the dielectric losses decreased while the dielectric constants did not change significantly. Similar trends for dielectric losses were observed when the as-deposited samples were annealed at 800℃. The reduction of dielectric losses at high-deposition temperatures and post annealing correlated well with the x-ray diffraction peak widths.
목차
Abstract
Ⅰ. Introduction
Ⅱ. Experimental Details
Ⅲ. Results and Discussion
Ⅳ. Conclusions
Acknowledgement
References
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