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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국진공학회(ASCT) Applied Science and Convergence Technology Applied Science and Convergence Technology Vol.28 No.3
- 발행연도
- 2019.5
- 수록면
- 55 - 59 (5page)
- DOI
- 10.5757/ASCT.2019.28.3.55
이용수
초록· 키워드
오류제보하기
We patterned a quantum dot (QD) layer via photolithography and fabricated a QD photodiode using an inverted QD-light emitting diode (LED) structure. It shows behavior similar to normal photodiodes in terms of photoresponse. However, the dark current was reduced by 1/10 and the photocurrent increased 10 times in comparison with unpatterned QD photodiodes. This study is beneficial for creating multicolor QD sensors and simultaneously integrating LEDs and photosensors on the same structure. It means that the sensor works while blinking time of LED and it could be applied to advanced display technique.
목차
Abstract
I. Introduction
II. Materials and methods
III. Results and discussion
IV. Conclusions
References
참고문헌 (13)
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UCI(KEPA) : I410-ECN-0101-2019-420-001277435