GaSe 층을 Cu-In-Ga 전구체 위에 적용하여 제조된 Cu(In,Ga)Se 박막의 Ga 분포 변화 연구

정광선; 신영민; 조양휘; 윤재호; 안병태

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자료유형: 학술저널

저자정보: 정광선 (한국과학기술원 신소재공학과) 신영민 (한국과학기술원 신소재공학과) 조양휘 (한국과학기술원 신소재공학과) 윤재호 (한국에너지기술연구원) 안병태 (한국과학기술원 신소재공학과)

저널정보: 한국재료학회 한국재료학회지 한국재료학회지 제20권 제8호

발행연도: 2010.1

수록면: 434 - 438 (5page)

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연구배경

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The selenization process has been a promising method for low-cost and large-scale production of high quality CIGS film. However, there is the problem that most Ga in the CIGS film segregates near the Mo back contact. So the solar cell behaves like a $CuInSe_2$ and lacks the increased open-circuit voltage. In this study we investigated the Ga distribution in CIGS films by using the $Ga_2Se_3$ layer. The $Ga_2Se_3$ layer was applied on the Cu-In-Ga metal layer to increase Ga content at the surface of CIGS films and to restrict Ga diffusion to the CIGS/Mo interface with Ga and Se bonding. The layer made by thermal evaporation was showed to an amorphous $Ga_2Se_3$ layer in the result of AES depth profile, XPS and XRD measurement. As the thickness of $Ga_2Se_3$ layer increased, a small-grained CIGS film was developed and phase seperation was showed using SEM and XRD respectively. Ga distributions in CIGS films were investigated by means of AES depth profile. As a result, the [Ga]/[In+Ga] ratio was 0.2 at the surface and 0.5 near the CIGS/Mo interface when the $Ga_2Se_3$ thickness was 220 nm, suggesting that the $Ga_2Se_3$ layer on the top of metal layer is one of the possible methods for Ga redistribution and open circuit voltage increase.

#Ga distribution #Cu #In,Ga) $Se_2$ #thin-films #selenization

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