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- 자료유형
- 학술대회자료
- 저자정보
- 발행연도
- 2021.2
- 수록면
- 178 - 178 (1page)
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When the thickness-dependent mobility is coupled with Thomas-Fermi screening and interlayer resistance in 2D materials, a conducting channel migrates from the bottom to the top-surface under electrostatic bias conditions. However, insufficient carrier density, atomically thin thickness, and oxid ... 전체 초록 보기
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