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논문 기본 정보

자료유형
학술대회자료
저자정보
Inseong Hwang (Hanyang University) Yunha Song (Hanyang University) Bongyoung Yoo (Hanyang University)
저널정보
한국표면공학회 한국표면공학회 학술발표회 초록집 2021년도 한국표면공학회 춘계학술대회
발행연도
2021.6
수록면
146 - 146 (1page)

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초록· 키워드

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Over several decades, metal-oxide-silicon field-effect transistor (MOSFET) has been widely utilized to numerous devices in the electronics industry, such as memory and logic devices, light-emitting diode, sound amplifier and oscillator. Especially, the scaling of the MOSFET structure has led to a revolution in the semiconductor industry, called the MOSFET revolution. In recent years, with the collapse of Moore’s law, the down-sizing of MOSFET has encountered various challenges; increased gate-oxide and junction leakage, drain-induced barrier lowering, lower output resistance, etc. To overcome these limitations of MOSFET, metal-insulator-metal (MIM) has attracted a great deal of attention as a next-generation field-effect transistor structure, due mainly to similarity with MOS and simple manufacturing process. Simultaneously, a high-quality oxide layer is required for faster operation than conventional MOSFET.
Aluminum- aluminum oxide-top electrode structure has been reported as the most promising MIM structure with high emission current and low threshold voltage. To fabricate aluminum-based MIM structure, atomic layer deposition and electrochemical anodic oxidation have been studied. In particular, electrochemical anodic oxidation has several advantages: cost-effective, large-scale production and various parameters. The anodic oxidation of aluminum has been studied as two methods: fir^_@span style=color:#999999 ^_# ... ^_@/span^_#^_@a href=javascript:; onclick=onClickReadNode('NODE10599504');fn_statistics('Z354','null','null'); style='color:#999999;font-size:14px;text-decoration:underline;' ^_#전체 초록 보기^_@/a^_#

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