Thermal Analysis and Design of AlGaInP-based Light Emitting Diode Arrays

Zhang Ban; Zhongzhu Liang; Jingqiu Liang; Weibiao Wang; JinguangLv; Yuxin Qin

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자료유형: 학술저널

저자정보: Zhang Ban Zhongzhu Liang Jingqiu Liang Weibiao Wang JinguangLv Yuxin Qin

저널정보: 한국광학회 Current Optics and Photonics Current Optics and Photonics Vol.1 No.2

발행연도: 2017.4

수록면: 143 - 149 (7page)

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LED arrays with pixel numbers of 3×3, 4×4, and 5×5 have been studied in this paper in order to enhancethe optical output power and decrease heat dissipation of an AlGaInP-based light emitting diode displaydevice (pixel size of 280×280 μm) fabricated by micro-opto-electro-mechanical systems. Simulation resultsshowed that the thermal resistances of the 3×3, 4×4, 5×5 arrays were 52°C/W, 69.7°C/W, and 84.3°C/W. The junction temperature was calculated by the peak wavelength shift method, which showed that themaximum value appears at the center pixel due to thermal crosstalk from neighboring pixels. The centraltemperature would be minimized with 40 μm pixel pitch and 150 μm substrate thickness as calculated bythermal modeling using finite element analysis. The modeling can be used to optimize parameters of highlyintegrated AlGaInP-based LED arrays fabricated by micro-opto-electro-mechanical systems technology.

#AlGaInP LED array #Junction temperature #Thermal analysis

참고문헌 (20)

참고문헌 신청

S. H. Lee / 2014 / Self-powered flexible inorganic electronic system / Nano Energy 14:111~125

J. Day / 2011 / III-Nitride full-scale high-resolution microdisplays / Applied Physics Letters 99:031116

X. Li / 2013 / New yellow Ba0.93Eu0.07Al2O4 phosphor for warm-white light-emitting diodes through single-emitting-center conversion / Light Science &Applications 2:50

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Z. J. Liu / 2009 / Monolithic LED microdisplay on active matrix substrate using flip-chip technology / IEEE Journal of Selected Topics in Quantum Electronics 15:1298~1302

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