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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국정보통신학회JICCE Journal of information and communication convergence engineering Journal of information and communication convergence engineering 제10권 제2호
- 발행연도
- 2012.6
- 수록면
- 200 - 204 (5page)
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초록· 키워드
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This study has presented the analysis of breakdown voltage for a double-gate metal-oxide semiconductor field-effect transistor (MOSFET) based on the doping distribution of the Gaussian function. The double-gate MOSFET is a next generation transistor that shrinks the short channel effects of the nano-scaled CMOSFET. The degradation of breakdown voltage is a highly important short channel effect with threshold voltage roll-off and an increase in subthreshold swings. The analytical potential distribution derived from Poisson’s equation and the Fulop’s avalanche breakdown condition have been used to calculate the breakdown voltage of a double-gate MOSFET for the shape of the Gaussian doping distribution. This analytical potential model is in good agreement with the numerical model. Using this model, the breakdown voltage has been analyzed for channel length and doping concentration with parameters such as projected range and standard projected deviation of Gaussian function. As a result, since the breakdown voltage is greatly changed for the shape of the Gaussian function, the channel doping distribution of a double-gate MOSFET has to be carefully designed.
목차
Abstract
I. INTRODUCTION
II. POTENTIAL AND BREAKDOWN VOLTAGE MODELS
III. RESULTS AND DISCUSSION
IV. CONCLUSIONS
REFERENCES
참고문헌 (9)
참고문헌 신청
1. [인터넷자원] - / / International Technology Roadmap for Semiconductors
2. [학술지(정기간행물)] - E. G. Ioannidis / 2011 / Effect of localized interface charge on the threshold voltage of short-channel undoped symmetrical doublegate MOSFETs / IEEE Transactions on Electron Devices 58 (2) : 433 ~ 440
3. [학술대회논문] - X. X. Du / 2009 / A comparative study of double gate MOSFET with asymmetric barrier heights at source/drain and the symmetric DG-SBFET / International Workshop on Junction Technology, Kyoto, Japan : 47 ~ 50
4. [학술지(정기간행물)] - Q. Chen / 2002 / A comprehensive analytical subthreshold swing(S)model for double-gate MOSFETs / IEEE Transactions on Electron Devices 49 (6) : 1086 ~ 1090
5. [학술대회논문] - H. Mohammad / 2011 / A new analytical model for lateral breakdown voltage of double-gate power MOSFETs / Proceedings of IEEE Regional Symposium on Micro and Nanoelectronics, Kota Kinabalu, Malaysia : 92 ~ 95
2. [학술지(정기간행물)] - E. G. Ioannidis / 2011 / Effect of localized interface charge on the threshold voltage of short-channel undoped symmetrical doublegate MOSFETs / IEEE Transactions on Electron Devices 58 (2) : 433 ~ 440
3. [학술대회논문] - X. X. Du / 2009 / A comparative study of double gate MOSFET with asymmetric barrier heights at source/drain and the symmetric DG-SBFET / International Workshop on Junction Technology, Kyoto, Japan : 47 ~ 50
4. [학술지(정기간행물)] - Q. Chen / 2002 / A comprehensive analytical subthreshold swing(S)model for double-gate MOSFETs / IEEE Transactions on Electron Devices 49 (6) : 1086 ~ 1090
5. [학술대회논문] - H. Mohammad / 2011 / A new analytical model for lateral breakdown voltage of double-gate power MOSFETs / Proceedings of IEEE Regional Symposium on Micro and Nanoelectronics, Kota Kinabalu, Malaysia : 92 ~ 95
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