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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국전기전자재료학회 Transactions on Electrical and Electronic Materials Transactions on Electrical and Electronic Materials 제23권 제1호
- 발행연도
- 2022.2
- 수록면
- 25 - 29 (5page)
- DOI
- https://doi.org/10.1007/s42341-021-00368-3
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초록· 키워드
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Hybrid-type thin-film transistors were fabricated using amorphous oxide and colloidal quantum dots. To prevent damage to the quantum dots, amorphous SIZO, which can be processed at low temperatures, was deposited by RF sputtering. In the case of a general hybrid type device, it is known that the characteristics of a multilayer material are significantly lower than that of a single material, and this is greatly affected by the interface characteristics between each material. The electrical characteristics of a single SIZO TFT, such as threshold voltage, field-effect mobility, on/off current ratio, and subthreshold slope, have been observed as ?0.15 V, 9.54 cm 2 /Vs, 2.9 × 10 8 , and 0.34 V/dec, respectively while electrical characteristics of hybrid-type OQO TFT were observed as 1.39 V, 9.19 cm 2 /Vs, 3.9 × 10 8 , and 0.35 V/dec, respectively. As a result, it was confirmed that the electrical characteristics did not change significantly when the single SIZO TFT and the hybrid type OQO TFT have been compared in this experiment. Its electrical properties are mainly driven by the upper and lower a-SIZO layers. a-SIZO which has amorphous properties, can provide excellent surface properties because it can completely cover the spherical QD when it comes into contact with the QD. These results are expected to be applicable to many important applications.
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