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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국전기전자재료학회 Transactions on Electrical and Electronic Materials Transactions on Electrical and Electronic Materials 제22권 제4호
- 발행연도
- 2021.8
- 수록면
- 419 - 423 (5page)
- DOI
- https://doi.org/10.1007/s42341-021-00335-y
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Relaxation time of metal capped amorphous silicon-indium-zinc-oxide (a-SIZO) thin fi lm transistors (TFTs) has been investigated. As increasing the length of metal capping layer, the electrical characteristics improved and threshold voltage (V th ) moved to negative direction from 1.4 to 0.6 V. The fabrication of thin fi lm type inverter was conducted with the SIZO TFT of enhancement mode and 40 μm metal capped SIZO TFT of depletion mode. The voltage transfer curve showed inversion clearly. The relaxation time has been measured to confi rm the electrical performance in the case of TFTs, indicating insignifi cant signal distortion. This result means it is possible to apply to integrated circuits or the next generation memory devices without any signifi cant signal distortion.
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