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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국전기전자재료학회 Transactions on Electrical and Electronic Materials Transactions on Electrical and Electronic Materials 제23권 제4호
- 발행연도
- 2022.8
- 수록면
- 327 - 336 (10page)
- DOI
- https://doi.org/10.1007/s42341-022-00398-5
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초록· 키워드
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Single-junction (SJ) silicon (Si)-based solar cells are currently widely used in the photovoltaic (PV) industry due to their low cost and rapid industrialization, but their low efficiency (theoretical efficiency limit of 29.4%) is the most significant factor preventing their further expansion. Multi-junction (MJ) solar cells may be a key way to break the effi ciency limit of SJ Si-based solar cells since the approach can take full advantage of different PV materials. To overcome the disadvantages of other types of solar cells and improve the cell efficiency of solar cells, a new MJ solar cell, the III-V/Si tandem solar cell, was fabricated. This article reviews the development of III-V/Si tandem solar cells and briefly describes the three major terminal confi gurations and the three growth mechanisms of III-V compounds on Si substrates. Finally, we present four methods that characterize the performance of III-V/Si tandem solar cells and compare the advantages and disadvantages of these four methods.
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