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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국전기전자재료학회 Transactions on Electrical and Electronic Materials Transactions on Electrical and Electronic Materials 제18권 제3호
- 발행연도
- 2017.6
- 수록면
- 141 - 143 (3page)
- DOI
- https://doi.org/10.4313/TEEM.2017.18.3.141
이용수
초록· 키워드
오류제보하기
Novel structured thin film transistors (TFTs) of amorphous silicon zinc tin oxide (a-SZTO) were designed andfabricated with a thin metal layer between the source and drain electrodes. A SZTO channel was annealed at 500℃.
A Ti/Au electrode was used on the SZTO channel. Metals are deposited between the source and drain in this novelstructured TFTs. The mobility of the was improved from 14.77 cm2/Vs to 35.59 cm2/Vs simply by adopting the novelstructure without changing any other processing parameters, such as annealing condition, sputtering power orprocessing pressure. In addition, stability was improved under the positive bias thermal stress and negative biasthermal stress applied to the novel structured TFTs. Finally, this novel structured TFT was observed to be less affectedby back-channel effect.
목차
등록된 정보가 없습니다.
참고문헌 (9)
참고문헌 신청
Kenji Nomura / 2004 / Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors / Nature 432(7016):488~492
T. S. Kamiya / 2010 / Sci. Technol. Adv. Mater. 11:044305
Kenji Nomura / 2006 / Amorphous Oxide Semiconductors for High-Performance Flexible Thin-Film Transistors / Japanese Journal of Applied Physics 45(5B):4303~4308
Jeong-Min Lee / 2008 / Bias-stress-induced stretched-exponential time dependence of threshold voltage shift in InGaZnO thin film transistors / Applied Physics Letters 93(9):093504
A. Suresh / 2008 / Bias stress stability of indium gallium zinc oxide channel based transparent thin film transistors / Applied Physics Letters 92(3):033502
T. S. Kamiya / 2010 / Sci. Technol. Adv. Mater. 11:044305
Kenji Nomura / 2006 / Amorphous Oxide Semiconductors for High-Performance Flexible Thin-Film Transistors / Japanese Journal of Applied Physics 45(5B):4303~4308
Jeong-Min Lee / 2008 / Bias-stress-induced stretched-exponential time dependence of threshold voltage shift in InGaZnO thin film transistors / Applied Physics Letters 93(9):093504
A. Suresh / 2008 / Bias stress stability of indium gallium zinc oxide channel based transparent thin film transistors / Applied Physics Letters 92(3):033502
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