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이 논문의 연구 히스토리 (6)
2013
2012
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본 연구에서는 Low-Emissivity 분야에 활용할 박막을 제작하여 특성 연구 및 최적화된 공정조건을 찾는 것에 주 목적을 두고 있다.
Low-E 분야에 활용할 박막을 제작하기 위해선 Multilayer 방식의 OMO(Ox
ide-Metal-Oxide)구조로 박막을 제작을 하여야 한다. 위의 구조로 박막을 제작할 경우 가시광 영역에서의 높은 투과율을 보여주며 적외선 영역에서는 매우 낮은 투과율을 보여주는 특성을 갖게된다. 적외선은 많은 열을 같이 동반하게 되는데 적외선 영역에서의 투과율이 낮아진다는 의미는 그만큼 열 차단이 잘된다는 것을 의미하며, Low-E 분야에 활용 가능함을 의미하는 말이기도 하다.
비정질 IGZO 물질은 다성분계 산화물 반도체로서, 최적구성비가 아직까지 확립이 되어 있지 않으며, 본 논문에서 사용한 IGZO(In:Ga:ZnO) 물질의 조성비는 1:1:1mol% 이며, Ag는 99.999%순도를 갖는다. 박막의 특성연구는 다양한 공정 조건에서 증착하여 구조적, 광학적 특성을 분석하였다.
X-선 회절분석기와 원자현미경을 이용하여 박막의 두께, 우선 배향 결정 구조 및 평균 표면 형태와 평균 표면 거칠기를 확인 하였다. 또한 UV-Vis-
NIR 분광광도계를 이용하여 300~1300nm 파장대의 투과율을 측정하고, 측정된 투과율을 통해 에너지 밴드갭을 확인 하였다.
본 연구의 다양한 조건별 실험을 통하여 Low-e에 사용 가능한 공정 조건을 확인 할수 있었으며, 비정질 IGZO 물질이 Low-e 분야에 우수한 특성을 갖는 것을 확인 할수 있었다.
Low-E 분야에 활용할 박막을 제작하기 위해선 Multilayer 방식의 OMO(Ox
ide-Metal-Oxide)구조로 박막을 제작을 하여야 한다. 위의 구조로 박막을 제작할 경우 가시광 영역에서의 높은 투과율을 보여주며 적외선 영역에서는 매우 낮은 투과율을 보여주는 특성을 갖게된다. 적외선은 많은 열을 같이 동반하게 되는데 적외선 영역에서의 투과율이 낮아진다는 의미는 그만큼 열 차단이 잘된다는 것을 의미하며, Low-E 분야에 활용 가능함을 의미하는 말이기도 하다.
비정질 IGZO 물질은 다성분계 산화물 반도체로서, 최적구성비가 아직까지 확립이 되어 있지 않으며, 본 논문에서 사용한 IGZO(In:Ga:ZnO) 물질의 조성비는 1:1:1mol% 이며, Ag는 99.999%순도를 갖는다. 박막의 특성연구는 다양한 공정 조건에서 증착하여 구조적, 광학적 특성을 분석하였다.
X-선 회절분석기와 원자현미경을 이용하여 박막의 두께, 우선 배향 결정 구조 및 평균 표면 형태와 평균 표면 거칠기를 확인 하였다. 또한 UV-Vis-
NIR 분광광도계를 이용하여 300~1300nm 파장대의 투과율을 측정하고, 측정된 투과율을 통해 에너지 밴드갭을 확인 하였다.
본 연구의 다양한 조건별 실험을 통하여 Low-e에 사용 가능한 공정 조건을 확인 할수 있었으며, 비정질 IGZO 물질이 Low-e 분야에 우수한 특성을 갖는 것을 확인 할수 있었다.
목차
제 1장. 서 론 ········································································································ 1제 2장. 이론적 배경 ····························································································· 3제 2.1절 Low-e 소개 ························································································· 3제 2.1절 산화물 반도체의 특성 ········································································ 5제 2.3절 IGZO의 특성 분석 ·············································································· 62.3.1 IGZO의 구조적 특성 분석 ··································································· 62.3.2 IGZO의 광학적 특성 분석 ··································································· 82.3.2 IGZO의 전기적 특성 분석 ·································································· 10제 3장. 연구방법 ·································································································· 11제 3.1절 OMO 구조의 Oxide layer 제작 ····················································· 11제 3.2절 OMO 구조의 Metal layer 제작 ······················································ 13제 3.3절 실험조건 ····························································································· 153.3.1 Oxide layer 두께변화에 따른 OMO구조 제작 ································ 153.3.2 Oxide layer RF Power 변화에 따른 OMO구조 제작 ····················· 173.3.3 Metal layer Ag 두께변화에 따른 OMO구조 제작 ··························· 19제 3.4절 분석방법 ······························································································ 21제 4장. 연구결과 ·································································································· 22제 4.1절 구조적 특성 ························································································ 224.1.1 XRD 데이터를 이용한 OMO박막 분석 ·············································· 224.1.2 AFM 데이터를 이용한 OMO박막 분석 ············································· 284.1.3 SEM 데이터를 이용한 OMO박막 분석 ············································· 394.1.4 TEM 데이터를 이용한 OMO박막 분석 ·············································· 42제 4.2절 광학적 특성 ························································································· 444.2.1 UV-VIS-NIR 분광 광도계를 이용한 OMO박막의 투과도 분석 ······· 444.2.2 투과도로부터 계산된 OMO박막의 에너지 밴드갭 분석 ················· 49제 5장. 결론 ··········································································································· 53참고문헌 ················································································································ 54Abstract ················································································································ 56
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