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논문 기본 정보

자료유형
학위논문
저자정보

장수천 (부산대학교, 부산대학교 대학원)

발행연도
2013
저작권
부산대학교 논문은 저작권에 의해 보호받습니다.

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Recently, the demand for the miniaturization of package substrate has been increasing. Technical innovation of package substrate manufacturers steps into CMP(chemical mechanical planarization) applications. Electroplated copper filled in trenches on substrate needs to be planarized for multi-level wires less than 10㎛. In the existing wiring, it was possible to remove unnecessary copper from substrate surface only through etching process, but now if etching process adopted, as more line width reduced, as more defects are occuring. As package substrate is Cu hybrid structure through the repeated Cu plating and removing process on CCL(copper clad lamination) substrate, it became more recently necessary to apply CMP technology to remove unnecessary copper from substrate surface.
The CMP process is material removal in the form of thin film with the relation motion between material and pad. Also known as CMP, is now widely recognized as the technology of choice or eliminating topographic variations and achieving near-perfect planarity of interconnection and metal layers in ultra large scale integrated(ULSI) devices.
This paper introduces CMP process as a new package substrate manufacturing step. The purpose of this study is to investigate an effect of surfactant and pad properties on dishing and erosion of Cu patterns with the line and space of around 10/10㎛ used for the advanced package substrate. The conventional Cu slurry without surfactant had problems including severe erosion of 0.58㎛ in Cu patterns smaller than 4/6㎛ and deep dishing of 4.2㎛ in Cu patterns larger than 14/16㎛. However, experimental results showed that the friction force during Cu CMP changed to lower value, and the dishing and erosion became smaller simultaneously as the surfactant concentration became higher. Finally, more globally planarized Cu patterns could be realized with erosion range of 0.22㎛ to 0.35㎛ and, dishing range of 0.37㎛ to 0.69㎛ respectively by using 3wt% concentration of surfactant. In addition, it was confirmed that dishing and erosion amount varies depending on alteration of pad properties. Viscoelastic and hardness of pad were minimized erosion amount in package substrate CMP.

목차

1. 서 론 1
1.1 연구 배경 1
1.2 연구 목적 및 필요성 4
1.3 연구 내용 10
2. 이론적 배경 12
2.1 패키지 기판의 제조 공정 12
2.2 Cu CMP 14
2.2.1 Cu CMP 메카니즘 14
2.2.2 슬러리 구성요소 19
2.2.3 계면활성제 특성 20
2.2.4 연마패드 특성 23
3. 계면활성제 조절에 따른 평탄화 특성 26
3.1 실험장치 및 방법 26
3.1.1 CMP 장비 26
3.1.2 Four-point probe 30
3.1.3 공초점 현미경 32
3.1.4모니터링 시스템 35
3.2 실험조건 및 선행실험 37
3.3 계면활성제가 연마율에 미치는 영향 41
3.4 구리 하이브리드 구조물에서의 디싱과 에로젼 44
4. 연마패드 종류에 따른 평탄화 특성 50
4.1 패드의 점탄성 및 경도 측정 50
4.2 패드 물성치 변화에 따른 연마결과 55
5. 결 론 58
참고 문헌 60
Abstract 63

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