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논문 기본 정보
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- 2016
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이 논문의 연구 히스토리 (4)
2016
2015
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Fine pitch technology has been developed for miniaturization and high performance of PCB(Printed Circuit Board). The reliability of PCB has emerged as a critical concern. Because size of solder bump that chip and substrate connect decreases, current density to solder bump increases by fine pitch formation. Main failure mode is the open-circuit failure due to void formation at the intermetallic compounds growth. This failure mode has been reported as a result of electromigration damage. also joule heating effect was very seriously under current stressing, and thermomigration in solder bumps during electromigration. Therefore, this study is needed to predict and prevent the open circuit failure caused by intermetallic compounds growth by electromigration and thermomigration.
This study predicted the IMC growth kinetic by electromigration and thermomigration in Sn-0.7Cu solder. The intermetallic compounds during reflow process grow again by electromigration due to the application of current density and thermogradient. The intermetallic compounds under electromigration and thermomigration grow in proportion to current density and joule heating effect. Consequently, crack that the main factor cause open circuit failure is formed by void formation and propagation at the intermetallic interface. Therefore, modeling of growth kinetics of intermetallic compounds. this study compared modeling results and experiment results. And we consider that the chemical diffusion. but A less error was derived from the result of electromigration simulation. But a little bit huge error was derived from the result of thermomigration simulation. reason is chemicaldiffusion and Cu6Sn5 island
This study predicted the IMC growth kinetic by electromigration and thermomigration in Sn-0.7Cu solder. The intermetallic compounds during reflow process grow again by electromigration due to the application of current density and thermogradient. The intermetallic compounds under electromigration and thermomigration grow in proportion to current density and joule heating effect. Consequently, crack that the main factor cause open circuit failure is formed by void formation and propagation at the intermetallic interface. Therefore, modeling of growth kinetics of intermetallic compounds. this study compared modeling results and experiment results. And we consider that the chemical diffusion. but A less error was derived from the result of electromigration simulation. But a little bit huge error was derived from the result of thermomigration simulation. reason is chemicaldiffusion and Cu6Sn5 island
목차
제 1 장 서 론 1제 2 장 이론적 배경 42.1 Flip Chip Ball Grid Array 42.2 무연솔더 62.3 Electromigration 82.4 Thermomigration 9제 3 장 금속간화합물 성장 모델 113.1 서론 113.2 Sn-Cu 금속간화합물 133.3 경계 조건 153.4 Electromigration에 의한 IMC 성장 속도 183.4.1 Electromigration에 의한 IMC 성장 모델 183.4.2 Electromigration에 의한 IMC 성장식 203.4.3 변수 선정 283.5 Thermomigration에 의한 IMC 성장 속도 333.5.1 Thermomigration에 의한 IMC 성장 모델 333.5.2 Thermomigration에 의한 IMC 성장식 353.5.3 변수 선정 403.6 Electro/Thermomigration에 의한 IMC 성장 예측 43제 4 장 Electromigration에 의한 IMC 성장 454.1 서론 454.2 실험 방법 464.3 결과 504.3.1 Electromigration에 의한 IMC성장 관찰 504.3.2 Electromigration에 의한 IMC두께 측정 56제 5 장 Thermomigration에 의한 IMC 성장 625.1 서론 625.2 실험 방법 635.3 결과 665.3.1 Thermomigration에 의한 IMC성장 관찰 665.3.2 Thermomigration에 의한 IMC두께 측정 68제 6장 결과 및 고찰 746.1 Simulation값과 실험값 비교 746.2 Chemicaldiffusion에 의한 IMC성장 786.2.1 Chemicaldiffusion에 의한 IMC성장 모델링 786.2.2 chemicaldifussion 변수선정 876.2.3 chemicaldiffusion에 의한 IMC성장 906.3 다른 연구 결과를 통한 실험식 검증 936.3.1 결과 비교 936.3.2 Modeling 95제 7장 결론 98참고문헌 100Abstract 102
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