지원사업
학술연구/단체지원/교육 등 연구자 활동을 지속하도록 DBpia가 지원하고 있어요.
커뮤니티
연구자들이 자신의 연구와 전문성을 널리 알리고, 새로운 협력의 기회를 만들 수 있는 네트워킹 공간이에요.
논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 대한전자공학회 JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE JOUNAL OF SEMICONDUCTOR THCHNOLOGY AND SCIENCE Vol.5 No.2
- 발행연도
- 2005.6
- 수록면
- 69 - 76 (8page)
이용수
초록· 키워드
오류제보하기
Interface-trap density, lifetime and Schottky barrier height of erbium-silicided Schottky diode are evaluated using equivalent circuit method. The extracted interface trap density, lifetime and Schottky barrier height for hole are determined as 1.5×10^(13) traps/㎠, 3.75 ms and 0.76 eV, respectively. The interface traps are efficiently cured by N₂annealing. Based on the diode characteristics, various sizes of erbium- silicided/platinum-silicided n/p-type Schottky barrier metal-oxide-semiconductor field effect transistors (SB-MOSFETs) are manufactured from 20㎛ to 35nm. The manufactured SB-MOSFETs show excellent drain induced barrier lowering (DIBL) characteristics due to the existence of Schottky barrier between source and channel. DIBL and subthreshold swing characteristics are compatible with the ultimate scaling limit of double gate MOSFETs which shows the possible application of SB-MOSFETs in nanoscale regime.
목차
Abstract
Ⅰ. Introduction
Ⅱ. Experimental
Ⅲ. Rerults and Discussions
Ⅳ. Conclusions
References
저자소개
참고문헌 (0)
참고문헌 신청함께 읽어보면 좋을 논문
논문 유사도에 따라 DBpia 가 추천하는 논문입니다. 함께 보면 좋을 연관 논문을 확인해보세요!
-
Novel properties of erbium-silicided n-type Schottky barrier metal-oxide-semiconductor field-effect transistors
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
2004 .06
-
Flexible and Sub-1V Field-Effect Schottky Barrier Transistors
한국고분자학회 학술대회 연구논문 초록집
2015 .10
-
Pt/4H-SiC Schottky Barrier Diodes의 특성에서 Schottky 접합의 열처리 효과
한국재료학회 학술발표대회
1999 .01
-
A Study of the Dependence of Effective Schottky Barrier Height in Ni Silicide/n-Si on the Thickness of the Antimony Interlayer for High Performance n-channel MOSFETs
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
2015 .02
-
Current Modeling for Accumulation Mode GaN Schottky Barrier MOSFET for Integrated UV Sensors
센서학회지
2017 .01
-
Schottky Barrier MOSFETs with High Current Drivability for Nano-regime Applications
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
2006 .03
-
Schottky-barrier 다이오드를 이용한 X-band용 혼합기에 관한 연구 ( A Study on the Microwave Mixer in X-band with Schottky-barrier Diode )
대한전자공학회 학술대회
1987 .11
-
RFID tag 집적화를 위한 0.18 ㎛ 표준 CMOS 공정을 이용한 쇼트키 다이오드의 제작
대한전자공학회 학술대회
2006 .06
-
고내압용 Au/Ni/Ti/3C-SiC 쇼트키 다이오드의 제작과 그 특성
전기전자재료학회논문지
2011 .01
-
Influences of Trap States at Metal/Semiconductor Interface on Metallic Source/Drain Schottky-Barrier MOSFET
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
2007 .06
-
광 주파수 측정용 Schottky 다이오드의 제작 및 특성 ( Fabrication and Characteristics of Schottky Diode at Laser Frequency )
대한전자공학회 학술대회
1987 .01
-
Polyelectrolyte-gated Vertical Schottky-Barrier Transistors
한국고분자학회 학술대회 연구논문 초록집
2017 .04
-
Pt-GaAs Schottky Barrier Diode의 Computer Simulation ( Computer Simulation of Pt-GaAs Schottky Barrier Diode )
전자공학회논문지
1990 .03
-
Low-Temperature Poly-Si TFT Charge Trap Flash Memory with Sputtered ONO and Schottky Junctions
Transactions on Electrical and Electronic Materials
2015 .01
-
SBD Type Silicide-Si High Current Schottky Barrier Switching Diode and Their Characteristics
International Conference on Electronics, Informations and Communications
1991 .01
-
SBD type Silicide-Si high current Schottky barrier switching diode and their characteristics
ICEIC : International Conference on Electronics, Informations and Communications
1991 .08
-
P-N Junction & Schottky Diode
대한전자공학회 단기강좌
1982 .01
-
대향 타겟 스퍼터링법으로 제작한 SiC SBD의 전기적 특성
반도체디스플레이기술학회지
2015 .01
-
Low Temperature Characteristics of Schottky Barrier Single Electron and Single Hole Transistors
[ETRI] ETRI Journal
2012 .12
-
$B^+$ 이온주입을 이용한 4H-SiC Schottky Barrier Diode 소자의 항복전압 향상 특성에 관한 연구
한국재료학회 학술발표대회
1998 .01
이 논문의 저자 정보
이 논문과 함께 이용한 논문
최근 본 자료
댓글(0)
0
UCI(KEPA) : I410-ECN-0101-2009-569-017711249