지원사업
학술연구/단체지원/교육 등 연구자 활동을 지속하도록 DBpia가 지원하고 있어요.
커뮤니티
연구자들이 자신의 연구와 전문성을 널리 알리고, 새로운 협력의 기회를 만들 수 있는 네트워킹 공간이에요.
논문 기본 정보
- 자료유형
- 학술대회자료
- 저자정보
- 발행연도
- 2010.4
- 수록면
- 132 - 137 (6page)
이용수
초록· 키워드
오류제보하기
Characteristics of crystallization of amorphous silicon (a-Si) utilizing aluminum-induced crystallization (AIC) and layer exchange process with a glass/Al/Ox/a-Si structure are investigated in this paper. The fabrication of polycrystalline silicon (pc-Si) seed layer for a pc-Si thin film solar cell with the maximum grain size of 45 ㎛ in length is carried out by appropriately adjusting the oxide film thickness and annealing temperature. Aluminum oxide (Al₂O₃) film which plays a significant role as the buffer layer between Al and amorphous silicon (a-Si) films was sputtered on the Al/glass bilayer with the different thicknesses. The a-Si was deposited on the Al₂O₃ thin film by plasma enhance chemical vapor deposition (PECVD) method. The workpieces were heated for two hours to induce AIC process at three different temperatures of 450, 500 and 550℃.
Once the a-Si was crystallized by AIC process, the silicon peak of 520 ㎝?¹ from Raman spectroscopy analysis was detected regardless of Al₂O₃ layer thickness even if the degree of crystallization can exist.
The Si grains with an average size ranging from 25 to 45 ㎛ can be fabricated with the same thickness ratio of a-Si/Al. From X-ray diffraction (XRD) data, the dominant crystal orientation of Si(111) together with Si(202), Si(220), Si(311) and Si(400) is found at the relatively high temperature over 500℃ whereas no Si crystal peak except Si(202) can be obtained at 450℃ after annealing.
The effects of process variables such as buffer layer thickness, annealing temperature and heating time upon the AIC results including grain size and orientation of pc-Si are demonstrated in detail.
Once the a-Si was crystallized by AIC process, the silicon peak of 520 ㎝?¹ from Raman spectroscopy analysis was detected regardless of Al₂O₃ layer thickness even if the degree of crystallization can exist.
The Si grains with an average size ranging from 25 to 45 ㎛ can be fabricated with the same thickness ratio of a-Si/Al. From X-ray diffraction (XRD) data, the dominant crystal orientation of Si(111) together with Si(202), Si(220), Si(311) and Si(400) is found at the relatively high temperature over 500℃ whereas no Si crystal peak except Si(202) can be obtained at 450℃ after annealing.
The effects of process variables such as buffer layer thickness, annealing temperature and heating time upon the AIC results including grain size and orientation of pc-Si are demonstrated in detail.
목차
Abstract
1. 서론
2. 실험
3. 결과 및 논의
5. 결론
참고문헌
참고문헌 (0)
참고문헌 신청함께 읽어보면 좋을 논문
논문 유사도에 따라 DBpia 가 추천하는 논문입니다. 함께 보면 좋을 연관 논문을 확인해보세요!
-
Study on the fabrication of a polycrystalline silicon (pc-Si) seed layer for the pc-Si lamelliform solar cell
한국신·재생에너지학회 학술대회 초록집
2010 .06
-
Characteristics of metal-induced crystallization (MIC) through a micron-sized hole in a glass/Al/SiO2/a-Si structure
한국신·재생에너지학회 학술대회 초록집
2010 .06
-
다결정 박막 실리콘 태양전지를 위한 이종 기판 위의 seed layer 제작에 관한 연구
한국태양에너지학회 학술대회논문집
2000 .06
-
Effect of Substrate Temperature on Polycrystalline Silicon Film Deposited on Al Layer
한국신·재생에너지학회 학술대회 초록집
2010 .06
-
역 알루미늄 유도 결정화 공정을 이용한 실리콘 태양전지 다결정 시드층 생성
한국재료학회지
2012 .01
-
Epitaxial Growth of Boron-doped Si Film using a Thin Large-grained Si Seed Layer for Thin-film Si Solar Cells
Current Photovoltaic Research
2014 .03
-
Fabrication of polycrystalline Si films by rapid thermal annealing of amorphous Si film using a poly-Si seed layer grown by vapor-induced crystallization
한국재료학회 학술발표대회
2010 .01
-
Si(100)의 얇은 산화막을 통한 Co$Si_{2}$형성에 관한 연구
한국재료학회 학술발표대회
1997 .01
-
TOP ELECTRODE ANNEALING EFFECTS IN SrBi$_2$Ta$_2$O$_9$/CeO$_2$/Si STRUCTURE
한국재료학회 학술발표대회
1998 .01
-
$SiO_2$ 위에 LP-CVD로 증착한 비정질 $Si/Si_{0.69}Ge_{0.31}, Si_{0.69}Ge_{0.31}Si$ 및 Si의 결정화 거동
한국재료학회 학술발표대회
1995 .01
-
선형열처리를 이용한 Si(100)/Si₃N₄∥Si(100)기판쌍의 직접접합
한국표면공학회 학술발표회 초록집
2000 .11
-
Influence of Silicon Content and Heat Treatment for Thermal Properties in Al-Si Binary System
한국정밀공학회 학술발표대회 논문집
2020 .09
-
열처리 조건에 따른 Al-Si 접촉
대한전기학회 학술대회 논문집
1990 .07
-
다결정 다이아몬드공구를 사용한 Al-Si합금의 선삭과정에서 절삭특성에 미치는 Si함량의 영향
Journal of the Korean Society for Precision Engineering
1995 .06
-
Improvement in Electrical Stability of poly-Si TFT Employing Vertical a-Si Offsets
한국정보디스플레이학회 학술대회
2000 .01
-
Excimer-Laser Crystallization for Low-Temperature Polycrystalline Si TFTs
한국정보디스플레이학회 학술대회
2000 .01
-
저온 공정에 의한 a-Si:H/c-Si 이종접합 태양전지 제조 및 동작특성 분석
한국신·재생에너지학회 학술대회 초록집
2005 .06
-
Al - Si 합금의 Si 석출 경면가공에 관한 연구 ( A Study on the Mirror Like Machining of Al - Si Alloy for Extraction of Si Particle )
대한기계학회 논문집
1992 .12
이 논문의 저자 정보
최근 본 자료
댓글(0)
0
UCI(KEPA) : I410-ECN-0101-2010-563-003376873