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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 대한전자공학회 JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE Journal of Semiconductor Technology and Science Vol.15 No.1
- 발행연도
- 2015.2
- 수록면
- 7 - 15 (9page)
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초록· 키워드
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We have investigated electrical properties of graphene/Ge Schottky barrier diode (SBD) fabricated on Ge film epitaxially grown on Si substrate. When decreasing temperature, barrier height decreased and ideality factor increased, implying their strong temperature dependency. From the conventional Richardson plot, Richardson constant was much less than the theoretical value for n-type Ge. Assuming Gaussian distribution of Schottky barrier height with mean Schottky barrier height and standard deviation, Richardson constant extracted from the modified Richardson plot was comparable to the theoretical value for n-type Ge. Thus, the abnormal temperature dependent Schottky behavior of graphene/Ge SBD could be associated with a considerable deviation from the ideal thermionic emission caused by Schottky barrier inhomogeneities.
목차
Abstract
Ⅰ. INTRODUCTION
Ⅱ. EXPERIMENT
Ⅲ. RESULTS AND DISCUSSIONS
Ⅴ. CONCLUSIONS
REFERENCES
참고문헌 (34)
참고문헌 신청
1. [학술지(정기간행물)] - V. Janardhanam / 2011 / Microstructural Evolution and Electrical Characteristics of Er-Germanides Formed on Ge Substrate / J. Electrochem. Soc 158 (8) : H751 ~ H755
2. [학술지(정기간행물)] - A. Dimoulas / 2006 / Fermi-level pinning and charge neutrality level in germanium / Appl. Phys. Lett 89 (1) : 252110-1 ~ 252110-2
3. [학술지(정기간행물)] - K. Martens / 2011 / Contact Resistivity and Fermi-Level Pinning in N-Type Ge Contacts with Epitaxial Si-Passivation / Appl. Phys. Lett 98 : 013504(1) ~ 013504(3)
4. [학술지(정기간행물)] - H. W. Jung / 2013 / Hydrazine Based Fermi-Level Depinning Process on Metal/ Germanium Schottky Junction / IEEE Electron Device Lett 34 (5) : 599 ~ 601
5. [학술지(정기간행물)] - J. R. Wu / 2011 / Impact of Fluorine Treatment on Fermi-Level Depinning for Metal/Germanium Schottky Junctions / Appl. Phys. Lett 99 : 253504-1 ~ 253504-3
2. [학술지(정기간행물)] - A. Dimoulas / 2006 / Fermi-level pinning and charge neutrality level in germanium / Appl. Phys. Lett 89 (1) : 252110-1 ~ 252110-2
3. [학술지(정기간행물)] - K. Martens / 2011 / Contact Resistivity and Fermi-Level Pinning in N-Type Ge Contacts with Epitaxial Si-Passivation / Appl. Phys. Lett 98 : 013504(1) ~ 013504(3)
4. [학술지(정기간행물)] - H. W. Jung / 2013 / Hydrazine Based Fermi-Level Depinning Process on Metal/ Germanium Schottky Junction / IEEE Electron Device Lett 34 (5) : 599 ~ 601
5. [학술지(정기간행물)] - J. R. Wu / 2011 / Impact of Fluorine Treatment on Fermi-Level Depinning for Metal/Germanium Schottky Junctions / Appl. Phys. Lett 99 : 253504-1 ~ 253504-3
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UCI(KEPA) : I410-ECN-0101-2016-569-001366831