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초록· 키워드
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Purpose: Fluorine doped tin oxide (FTO) bottom electrode for Ta₂O<SUB>5</SUB> based RRAM was studied to apply for transparent resistive switching memory devices owing to its superior transparency, good conductivity and chemical stability.
Methods: ITO/Ta₂O<SUB>5</SUB>/FTO (ITF) and ITO/Ta₂O<SUB>5</SUB>/Pt (ITP) devices were fabricated on glass and Si substrate, respectively. UV-visible (UV-VIS) spectroscopy was used to examine transparency of the ITF device and its band gap energy was determined by conventional Tauc plot. Electrical properties, such as electroforming and voltage-induced RS characteristics were measured and compared.
Results: The device with an FTO bottom electrode showed good transparency (>80%), low forming voltage (~-2.5V), and reliable bipolar RS behavior. Whereas, the one with Pt electrode showed both bipolar and unipolar RS behaviors unstably with large forming voltage (~-6.5V).
Conclusion: Transparent and conducting FTO can successfully realize a transparent RRAM device. It is concluded that FTO electrode may form a stable interface with Ta₂O<SUB>5</SUB> switching layer and plays as oxygen ion reservoir to supply oxygen vacancies, which eventually facilitates a stable operation of RRAM device.
Methods: ITO/Ta₂O<SUB>5</SUB>/FTO (ITF) and ITO/Ta₂O<SUB>5</SUB>/Pt (ITP) devices were fabricated on glass and Si substrate, respectively. UV-visible (UV-VIS) spectroscopy was used to examine transparency of the ITF device and its band gap energy was determined by conventional Tauc plot. Electrical properties, such as electroforming and voltage-induced RS characteristics were measured and compared.
Results: The device with an FTO bottom electrode showed good transparency (>80%), low forming voltage (~-2.5V), and reliable bipolar RS behavior. Whereas, the one with Pt electrode showed both bipolar and unipolar RS behaviors unstably with large forming voltage (~-6.5V).
Conclusion: Transparent and conducting FTO can successfully realize a transparent RRAM device. It is concluded that FTO electrode may form a stable interface with Ta₂O<SUB>5</SUB> switching layer and plays as oxygen ion reservoir to supply oxygen vacancies, which eventually facilitates a stable operation of RRAM device.
목차
1. Introduction
2. Experimental Procedure
3. Results and Discussion
4. Conclusion
References
참고문헌 (15)
참고문헌 신청
Hwang, C. S. (2015). “Prospective of Semiconductor Memory Devices: from Memory System to Materials”. Advanced Electronic Materials, Vol. 1, No. 6.
Valov, I., Waser, R., Jameson, J. R. and Kozicki, M. N. (2011). “Electrochemical metallization memoriesfundamentals, applications, prospects”. Nanotechnology, Vol. 22, No. 25, pp. 254003.
Jeong, D. S. et al. (2012). “Emerging memories: resistive switching mechanisms and current status”. Reports on Progress in Physics, Vol. 75, No. 7, pp. 076502.
Yu, S. (2014). “Overview of resistive switching memory( RRAM) switching mechanism and device modeling”. Circuits and Systems (ISCAS), 2014 IEEE International Symposium on, pp. 2017-2020.
Yang, J. J., Strukov, D. B. and Stewart, D. R. (2013). “Memristive devices for computing”. Nature nanotechnology, Vol. 8, No. 1, pp. 13-24.
Valov, I., Waser, R., Jameson, J. R. and Kozicki, M. N. (2011). “Electrochemical metallization memoriesfundamentals, applications, prospects”. Nanotechnology, Vol. 22, No. 25, pp. 254003.
Jeong, D. S. et al. (2012). “Emerging memories: resistive switching mechanisms and current status”. Reports on Progress in Physics, Vol. 75, No. 7, pp. 076502.
Yu, S. (2014). “Overview of resistive switching memory( RRAM) switching mechanism and device modeling”. Circuits and Systems (ISCAS), 2014 IEEE International Symposium on, pp. 2017-2020.
Yang, J. J., Strukov, D. B. and Stewart, D. R. (2013). “Memristive devices for computing”. Nature nanotechnology, Vol. 8, No. 1, pp. 13-24.
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UCI(KEPA) : I410-ECN-0101-2016-323-002731187