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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 대한전자공학회 JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE Journal of Semiconductor Technology and Science Vol.22 No.5
- 발행연도
- 2022.10
- 수록면
- 346 - 352 (7page)
- DOI
- 10.5573/JSTS.2022.22.5.346
이용수
초록· 키워드
오류제보하기
Recently, research has been conducted on a biomimetic system called artificial neural networks (ANNs) to overcome the limits of Von Neumann’s system. Spiking neural networks (SNNs) in ANNs are hardware systems that implement NNs’ low-power parallel processing. The electrical characteristics of synaptic devices, which affect learning and memory, are important in SNN construction. Synaptic devices based on resistive switching are called memristors and have sufficient learning capabilities, such as spike-timing-dependent plasticity gradual switching [1]. However, memristors require high switching voltages and currents, resulting in high power consumption. To reduce the operation voltage of the synapse, new materials must be developed for the switching oxide and metal electrode. The conventional memristor structure comprises metal-oxide-metal (MOM) or metal-oxide-N+Si (MOS). This study proposes a synaptic device with single-walled carbon nanotubes (SWCNTs) with excellent electrical and mechanical properties to lower the switching voltage and fabricate a metal-oxide-SWCNTs-N+Si (MOCS)-structured synaptic device using SWCNTs as a metal electrode, as shown in Fig. 1 [2]. Finally, the electrical characteristics of MOM, MOS, and MOCS structures are analyzed and compared.
목차
Abstract
Ⅰ. INTRODUCTION
Ⅱ. RESISTIVE SWITCHING DEVICE (RRAM)
Ⅲ. 1D MATERIAL SWCNTS
Ⅳ. FABRICATION PROCESS
Ⅴ. MEASUREMENT RESULT
Ⅵ. CONCLUSION
REFERENCES
참고문헌 (14)
참고문헌 신청
Y. Shimeng, et al. "An electronic synapse device based on metal oxide resistive switching memory for neuromorphic computation," Electron Devices, IEEE Transactions on, Vol. 58, No. 8, pp. 2729-2737, 2011.
K. Young Lae, et al. "Voltage-switchable photocurrents in single-walled carbon nanotube-silicon junctions for analog and digital optoelectronics," Nature Photonics, Vol. 8, No. 3, pp. 239-243, 2014.
J. Yao, Z. Jin, L. Zhong, D. Natelson, and J. M. Tour, “Two-terminal nonvolatile memories based on single-walled carbon nanotubes,” ACS Nano, Vol. 3, No. 12, pp. 4122-4126, 2009.
Y. Chai, Y. Wu, K. Takei, H.Y. Chen, S. Yu, P.C.H. Chan, A. Javey, H.-S. Philip Wong, “Nanoscale Bipolar and Complementary Resistive Switching Memory Based on Amorphous Carbon,” Electron Devices, IEEE Transactions on, pp. 3933-3939, 2011.
Y. Bai, et al. “Stacked 3D RRAM Array with Graphene/CNT as Edge Electrodes,” Scientific Reports Vol. 5, pp. 13785, 2015.
K. Young Lae, et al. "Voltage-switchable photocurrents in single-walled carbon nanotube-silicon junctions for analog and digital optoelectronics," Nature Photonics, Vol. 8, No. 3, pp. 239-243, 2014.
J. Yao, Z. Jin, L. Zhong, D. Natelson, and J. M. Tour, “Two-terminal nonvolatile memories based on single-walled carbon nanotubes,” ACS Nano, Vol. 3, No. 12, pp. 4122-4126, 2009.
Y. Chai, Y. Wu, K. Takei, H.Y. Chen, S. Yu, P.C.H. Chan, A. Javey, H.-S. Philip Wong, “Nanoscale Bipolar and Complementary Resistive Switching Memory Based on Amorphous Carbon,” Electron Devices, IEEE Transactions on, pp. 3933-3939, 2011.
Y. Bai, et al. “Stacked 3D RRAM Array with Graphene/CNT as Edge Electrodes,” Scientific Reports Vol. 5, pp. 13785, 2015.
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