지원사업
학술연구/단체지원/교육 등 연구자 활동을 지속하도록 DBpia가 지원하고 있어요.
커뮤니티
연구자들이 자신의 연구와 전문성을 널리 알리고, 새로운 협력의 기회를 만들 수 있는 네트워킹 공간이에요.
논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 대한전자공학회 JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE Journal of Semiconductor Technology and Science Vol.19 No.2
- 발행연도
- 2019.4
- 수록면
- 214 - 219 (6page)
- DOI
- 10.5573/JSTS.2019.19.2.214
이용수
초록· 키워드
오류제보하기
We investigated proton-irradiation effects on the charge trapping-related instability of normally-off AlGaN/GaN recessed MISHFETs. The reduction of drain current (I<SUB>D</SUB>) by 57.3 % and the shift of threshold voltage (V<SUB>th</SUB>) by 1.5 V were induced by 5 MeV proton irradiation with a total dose of 5ⅹ10<SUP>14</SUP> ㎝<SUP>-2</SUP>. Short-term DC voltage stress tests were carried out before and after irradiation in order to investigate how temporary instability caused by the charge trapping could be affected by the proton irradiation. The increase in the interface trap density was probed by capture emission time (CET) map and conductance method, whereas the breakdown voltage was increased after proton irradiation. TCAD simulation using Silvaco Atlas showed the reduction of lateral electric field of gate edge at drain side after proton irradiation as well as the increase of lateral electric field in the access region where charge trapping mostly occurs. Radiation effect can worsen the device instability by increasing interface traps and electric field in the access region.
목차
Abstract
Ⅰ. INTRODUCTION
Ⅱ. DEVICE FABRICATION AND EXPERIMENT
Ⅲ. RESULT AND DISCUSSION
Ⅴ. CONCLUSIONS
REFERENCES
참고문헌 (23)
참고문헌 신청
U. K. Mishra, P. Parikh, and Y. Wu, “AlGaN/GaN HEMTs-an overview of device operation and applications”, Proc. IEEE, Vol. 90, No. 6, pp. 1022-1031, Nov., 2002.
L. F. Eastman and U. K. Mishra, “The Toughest yet [GaN Transistors]”, IEEE spect., Vol. 39, No. 5, pp. 28-33, Aug., 2002.
R. Gaska, Q. Chen, J. Yang, A. Osinsky, M. Asif Khan, and M. S. Shur, “High-temperature performance of AlGaN/GaN HFET’s on SiC substrates”, IEEE Electron Device Lett., Vol. 18, No. 10, pp. 492-494, Oct., 1997.
O. Aktas, Z. F. Fan, S. N. Mohammad, A. E. Botchkarev, and H. Morkoc, “High-temperature characteristics of AlGaN/GaN modulation doped field-effect transistors”, Appl. Phys. Lett., Vol. 69, No. 25, pp. 3872-3874, Jun., 1996.
J. Mararo, G. Nicolas, D. M. Nhut, S. Forestier, S. Rochette, O. Vendier, D. Langrez, J. Cazaux, and M. Feudale, “GaN for space application: Almost ready for flight”, Int. J. Microw. Wirel., Vol. 2, No. 1, pp. 121-133, Feb., 2010.
L. F. Eastman and U. K. Mishra, “The Toughest yet [GaN Transistors]”, IEEE spect., Vol. 39, No. 5, pp. 28-33, Aug., 2002.
R. Gaska, Q. Chen, J. Yang, A. Osinsky, M. Asif Khan, and M. S. Shur, “High-temperature performance of AlGaN/GaN HFET’s on SiC substrates”, IEEE Electron Device Lett., Vol. 18, No. 10, pp. 492-494, Oct., 1997.
O. Aktas, Z. F. Fan, S. N. Mohammad, A. E. Botchkarev, and H. Morkoc, “High-temperature characteristics of AlGaN/GaN modulation doped field-effect transistors”, Appl. Phys. Lett., Vol. 69, No. 25, pp. 3872-3874, Jun., 1996.
J. Mararo, G. Nicolas, D. M. Nhut, S. Forestier, S. Rochette, O. Vendier, D. Langrez, J. Cazaux, and M. Feudale, “GaN for space application: Almost ready for flight”, Int. J. Microw. Wirel., Vol. 2, No. 1, pp. 121-133, Feb., 2010.
함께 읽어보면 좋을 논문
논문 유사도에 따라 DBpia 가 추천하는 논문입니다. 함께 보면 좋을 연관 논문을 확인해보세요!
-
Synthesis of polyketone-g -vinylbenzyl chloride anion exchange membrane by Co60 γ-ray irradiation
한국고분자학회 학술대회 연구논문 초록집
2016 .04
-
Simulation of the irradiation effect on hardness of Chinese HTGR A508-3 steels with CPFEM
Nuclear Engineering and Technology
2019 .01
-
Characterization of the Vertical Position of the Trapped Charge in Charge-trap Flash Memory
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
2017 .04
-
Ar Ion Irradiation Hardening of High-Cr Ferritic/Martensitic Steels at 700 °C
Metals and Materials International
2016 .01
-
질화갈륨 기반 전자소자의 고에너지 양성자 조사 영향평가를 위한 전산모사 모델링 연구
방사선산업학회지
2021 .12
-
A Combined Spectroscopic Investigation of Charge Trapping Mechanism In Polymer Semiconducotrs for High Operational Stablity of Polymer Field-Effect Transistors
한국고분자학회 학술대회 연구논문 초록집
2021 .10
-
TMAH 기반 전처리를 이용한 AlGaN/GaN HEMT의 양성자 조사에 대한 전기적 특성 분석
대한전자공학회 학술대회
2024 .06
-
저온 측정을 이용한 플래쉬 메모리의 charge trapping layer 내의 트랩 분포 분석
대한전자공학회 학술대회
2020 .08
-
전하보유모델에 기초한 SONOS 플래시 메모리의 전하 저장층 두께에 따른 트랩 분석
반도체디스플레이기술학회지
2019 .01
-
The investigation of the carbon on irradiation hardening and defect clustering in RPV model alloy using ion irradiation and OKMC simulation
Nuclear Engineering and Technology
2024 .06
-
Effect of irradiation temperature on the nanoindentation behavior of P92 steel with thermomechanical treatment
Nuclear Engineering and Technology
2022 .07
-
Effects of High Energy Proton Irradiation on Polystyrene Films
한국고분자학회 학술대회 연구논문 초록집
2016 .10
-
식육제품의 조사처리기준 제정에 관한 인식조사
방사선산업학회지
2024 .09
-
Frequency-dependent C-V Characteristic-based Extraction of Interface Trap Density in Normally-off Gate-recessed AlGaN/GaN Heterojunction Field-effect Transistors
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
2015 .10
-
SONOS NAND 플래시 메모리 소자에서의 Lateral Charge Migration에 의한 소자 안정성 연구
반도체디스플레이기술학회지
2019 .01
-
Study of Helium Irradiation Effect on W-Ta Alloy Thin Films
대한기계학회 춘추학술대회
2020 .07
-
전자빔 조사가 ZnO 박막의 전기적 특성 변화에 미치는 영향
전기전자재료학회논문지
2017 .01
-
5-MeV Proton-irradiation characteristics of AlGaN/GaN – on-Si HEMTs with various Schottky metal gates
전기전자학회논문지
2018 .06
-
Effect of high energy proton irradiation on polyacrylonitrile films
한국고분자학회 학술대회 연구논문 초록집
2016 .04
-
Characterization of the effect of He+ irradiation on nanoporous-isotropic graphite for molten salt reactors
Nuclear Engineering and Technology
2020 .01
이 논문의 저자 정보
이 논문과 함께 이용한 논문
Filter-free AlGaN Photodiode with High Quantum Efficiency for Partial Discharge Detection
Thu Thi Thuy Pham
,
June-Heang Choi
,
Chun-Hyung Cho
외 1명
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
2020
.04
The Reinforcement Learning based Local Routing Optimization for Ad-hoc Network
Yongsu Lee
,
Jongchan Woo
,
Hoi-Jun Yoo
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
2019
.02
A 1-V 3.8-mW Fractional-N PLL Synthesizer with 25% Duty-Cycle LO Generator in 65 nm CMOS for Bluetooth Applications
Yongho Lee
,
Seungsoo Kim
,
Hyunchol Shin
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
2018
.12
최근 본 자료
댓글(0)
0