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논문 기본 정보

자료유형
학술대회자료
저자정보
Sibao Ding (Harbin Institute of Technology) Panbao Wang (Harbin Institute of Technology) Wei Wang (Harbin Institute of Technology) Dianguo Xu (Harbin Institute of Technology) Frede Blaabjerg (Aalborg University)
저널정보
전력전자학회 ICPE(ISPE)논문집 ICPE 2019-ECCE Asia
발행연도
2019.5
수록면
2,846 - 2,852 (7page)

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초록· 키워드

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The parasitic inductance from the wirings and the terminals of SiC MOSFETs has a significant impact on the behavior of current sharing of parallel-connected SiC MOSFETs. To investigate the mechanism of current mismatch in response to the parasitic inductance, the circuit model of parallel-connected SiC MOSFETs is built to obtain the mathematic relationship between current difference and parasitic inductance in both dynamic and static states. Because the way of connecting the parallel-connected SiC MOSFETs with the coupled inductor in series can lead to the turn-off voltage ringing and overshoot, an improved structure is further proposed in this paper. A RCD snubber circuit is added into the proposed structure by referring to the coupled inductor with transformer in fly-back converter. Finally, the approach is verified through the LTspice software and experiments.

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Abstract
I. INTRODUCTION
II. MATHEMATICAL ANALYSIS OF IMBALANCE CURRENT DUE TO ELECTRICAL PARAMETERS
III. PARALLEL-CONNECTED SIC MOSFETS BASED ON COUPLED INDUCTOR
IV. SIMULATION RESULTS AND EXPERIMENTAL WAVEFORMS
V. CONCLUSIONS AND FUTURE WORK
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