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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
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- 한국전기전자재료학회 Transactions on Electrical and Electronic Materials Transactions on Electrical and Electronic Materials 제16권 제3호
- 발행연도
- 2015.1
- 수록면
- 130 - 134 (5page)
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This research proposes the use of a composition modulated (ZrO2)x(Al2O3)1-x film as a charge trapping layer for charge trap flash memory; this is possible when the Zr (Al) atomic percent is controlled to form a variable bandgap as identified by the valence band offsets and electron energy loss spectrum measurements. Compared to memory devices with uniform compositional (ZrO2)0.1(Al2O3)0.9 or a (ZrO2)0.92(Al2O3)0.08 trapping layer, the memory device using the composition modulated (ZrO2)x(Al2O3)1-x as the charge trapping layer exhibits a larger memory window (6.0 V) at the gate sweeping voltage of ±8 V, improved data retention, and significantly faster program/erase speed.
Improvements of the memory characteristics are attributed to the special energy band alignments resulting from non-uniform distribution of elemental composition. These results indicate that the composition modulated (ZrO2) x(Al2O3)1-x film is a promising candidate for future nonvolatile memory device applications.
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참고문헌 (20)
참고문헌 신청
Chenxin Zhu / 2010 / Performance enhancement of multilevel cell nonvolatile memory by using a bandgap engineered high-κ trapping layer / Applied Physics Letters 97 (25) : 2
Dahlang Tahir / 2009 / Band alignment of atomic layer deposited (ZrO[sub 2])[sub x](SiO[sub 2])[sub 1?x] gate dielectrics on Si (100) / Applied Phy
Gang Zhang / 2007 / Spatial Distribution of Charge Traps in a SONOS-Type Flash Memory Using a High- <formula formulatype="inline"><tex>$k$</tex></formul
Goon-Ho Park / 2010 / Reliability of modified tunneling barriers for high performance nonvolatile charge trap flash memory application / Applied Physics Letters 96 (4) : 0435
Jingjian Ren / 2013 / Non-volatile memory effect of a high-density NiSi nano-dots floating gate memory using single triangular-shaped Si nanowire channel / Applied Physics A
Dahlang Tahir / 2009 / Band alignment of atomic layer deposited (ZrO[sub 2])[sub x](SiO[sub 2])[sub 1?x] gate dielectrics on Si (100) / Applied Phy
Gang Zhang / 2007 / Spatial Distribution of Charge Traps in a SONOS-Type Flash Memory Using a High- <formula formulatype="inline"><tex>$k$</tex></formul
Goon-Ho Park / 2010 / Reliability of modified tunneling barriers for high performance nonvolatile charge trap flash memory application / Applied Physics Letters 96 (4) : 0435
Jingjian Ren / 2013 / Non-volatile memory effect of a high-density NiSi nano-dots floating gate memory using single triangular-shaped Si nanowire channel / Applied Physics A
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