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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국진공학회(ASCT) Journal of Korean Vacuum Science & Technology Journal of Korean Vacuum Science & Technology Vol.2 No.1
- 발행연도
- 1998.4
- 수록면
- 49 - 54 (6page)
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초록· 키워드
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The effect of deposition parameters on the solid-phase crystallization of amorphous silicon films deposited by plasma-enhanced chemical vapor deposition has been investigated by x-ray diffraction. The amorphous silicon films were prepared on Si(100) wafers using SiH₄ gas with and without H₂ dilution at the substrate temperatures between 120℃ and 380℃. The R.F. powers and the deposition pressures were also varied. After crystallizing at 600℃ for 24h, the films exhibited (111), (220), and (311) x-ray diffraction peaks. The (111) peak intensity increased as the substrate temperature decreased, and the H₂ dilution suppressed the crystallization. Increasing R.F. powers within the limits of etching level and increasing deposition pressures also have enhanced the peak intensity. The peak intensity was closely related to the deposition rate, which may be an indirect indicator of structural disorder in amorphous silicon films. Our results are consistent with the fact that an increase of the structural disorder in amorphous silicon films enhances the grain size in the crystallized films.
목차
Abstract
Ⅰ. Introduction
Ⅱ. Experiment
Ⅲ. Results and discussion
Ⅳ. Conclusion
Acknowledgments
References
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