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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국진공학회(ASCT) Journal of Korean Vacuum Science & Technology Journal of Korean Vacuum Science & Technology Vol.7 No.2
- 발행연도
- 2003.12
- 수록면
- 33 - 38 (6page)
이용수
초록· 키워드
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Fluorinated amorphous carbon thin films (a-C:F) for the use of low dielectric constant intermetallic layer dielectrics are deposited by plasma enhanced chemical vapor deposition with C₄F_8 and Si₂H_6/He gas mixture as precursors. To characterize and improve film properties, we changed various conditions such as deposition temperature, and RF power, and we measured the thickness and refractive indexes and FT-IR spectrum before and after annealing. At low temperatures the film properties were very poor although the growth rate was very high. On the other hand, the growth rate was low at high temperature. The growth rate increased in accordance with the deposition pressure. The dielectric constants of samples were in the range of 1.5~5.
목차
Abstract
1. Introduction
2. Experimental Procedures
3. Results and Discussion
4. Conclusions
Acknowledgments
References
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UCI(KEPA) : I410-ECN-0101-2019-420-001258810