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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국진공학회(ASCT) Journal of Korean Vacuum Science & Technology Journal of Korean Vacuum Science & Technology Vol.4 No.3
- 발행연도
- 2000.10
- 수록면
- 63 - 67 (5page)
이용수
초록· 키워드
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We have studied the photoluminescence properties of undoped epitaxial layers of GaN on sapphire substrate grown by horizontal low pressure metal organic chemical vapor deposition method in the temperature range of 9-300 K. At 9 K the spectra are dominated by the well resolved interband free excitons A and B as well as bound excitons. Temperature dependence of free exciton transitions was studied and Varshni′s coefficients for the temperature variation of bandgap were determined.
목차
Abstract
Ⅰ. Introduction
Ⅱ. Experimental methods
Ⅲ. Results and discussion
Ⅳ. Conclusions
References
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UCI(KEPA) : I410-ECN-0101-2019-420-001259544