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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 대한전자공학회 JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE Journal of Semiconductor Technology and Science Vol.20 No.2
- 발행연도
- 2020.4
- 수록면
- 151 - 157 (7page)
- DOI
- 10.5573/JSTS.2020.20.2.151
이용수
초록· 키워드
오류제보하기
In this study, new test patterns to evaluate the charge migration in 3D SONOS NAND flash memory are suggested. The charge migration in Si3N4, the charge trapping layer of SONOS is an important factor affecting the performance of the memory. To analyze the charge migration based on the proposed test pattern, the device was fabricated with a capacitor structure, and the charge loss and retention properties were measured by capacitance-voltage analysis. The charge loss due to lateral migration and vertical migration can be separately calculated using the test pattern. In addition, the activation energy was extracted to identify the cause of charge migration. This study is expected to contribute to the reliability problem of charge migration of 3D NADN Flash memory.
목차
Abstract
I. INTRODUCTION
II. EXPERIMENT
III. SIMULATION RESULTS
IV. CONCLUSIONS
REFERENCES
참고문헌 (12)
참고문헌 신청
N. Shibata, K. Kanda, T. Shimizu, J. Nakai, et al, 13.1 A 1.33 Tb 4-bit/Cell 3D-Flash Memory on a 96-Word-Line-Layer Technology.IEEE International Solid-State Circuits Conference-(ISSCC). IEEE, pp. 210-212, 2019.
R. Rizk, D. Rizk, A. Kumar, M. Bayoumi, Demystifying Emerging Nonvolatile Memory Technologies: Understanding Advantages, Challenges, Trends, and Novel Applications. 2019 IEEE International Symposium on Circuits and Systems (ISCAS). IEEE, pp.1-5, 2019.
W. Jeong, J. W. Im, D. H. Kim, et al. A 128 Gb 3b/cell V-NAND flash memory with 1 Gb/s I/O rate. IEEE Journal of Solid-State Circuits vol. 51, pp. 204-212, 2015.
H. Maejima, K. Kanda, S. Fujimura, T. Takagiwa, et al. A 512Gb 3b/Cell 3D flash memory on a 96- word-line-layer technology. 2018 IEEE International Solid-State Circuits Conference- (ISSCC). IEEE, pp. 336-338, 2018.
A. Maconi, A. Arreghini, C. M. Compagnoni, G. V, den bosch, A. S. Spinelli, J. V. Houdt, A. L. Lacaita, . Comprehensive investigation of the impact of lateral charge migration on retention performance of planar and 3D SONOS devices. Solid-State Electronics, vol. 74, pp. 64-70, 2012.
R. Rizk, D. Rizk, A. Kumar, M. Bayoumi, Demystifying Emerging Nonvolatile Memory Technologies: Understanding Advantages, Challenges, Trends, and Novel Applications. 2019 IEEE International Symposium on Circuits and Systems (ISCAS). IEEE, pp.1-5, 2019.
W. Jeong, J. W. Im, D. H. Kim, et al. A 128 Gb 3b/cell V-NAND flash memory with 1 Gb/s I/O rate. IEEE Journal of Solid-State Circuits vol. 51, pp. 204-212, 2015.
H. Maejima, K. Kanda, S. Fujimura, T. Takagiwa, et al. A 512Gb 3b/Cell 3D flash memory on a 96- word-line-layer technology. 2018 IEEE International Solid-State Circuits Conference- (ISSCC). IEEE, pp. 336-338, 2018.
A. Maconi, A. Arreghini, C. M. Compagnoni, G. V, den bosch, A. S. Spinelli, J. V. Houdt, A. L. Lacaita, . Comprehensive investigation of the impact of lateral charge migration on retention performance of planar and 3D SONOS devices. Solid-State Electronics, vol. 74, pp. 64-70, 2012.
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UCI(KEPA) : I410-ECN-0101-2020-569-000585235