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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국전기전자재료학회 Transactions on Electrical and Electronic Materials Transactions on Electrical and Electronic Materials 제16권 제4호
- 발행연도
- 2015.1
- 수록면
- 183 - 186 (4page)
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This research investigates the impact of charge spreading on the data retention of three-dimensional (3D) siliconoxide- nitride-oxide-silicon (SONOS) flash memory where the charge trapping layer is shared along the cell string. In order to do so, this study conducts an electrical analysis of the planar SONOS test pattern where the silicon nitride charge storage layer is not isolated but extends beyond the gate electrode. Experimental results from the test pattern show larger retention loss in the devices with extended storage layers compared to isolated devices. This retention degradation is thought to be the result of an additional charge spreading through the extended silicon nitride layer along the width of the memory cell, which should be improved for the successful 3-D application of SONOS flash devices.
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참고문헌 (18)
참고문헌 신청
A. Maconi / 2012 / Comprehensive investigation of the impact of lateral charge migration on retention performance of planar and 3D SONOS devices / Solid-State Electronics 74
A. Suhane / 2009 / / Proceedings of the European presented at the Solid State Device Research Conference 2009 : 276 ~
B. DeSalvo / 2004 / Performance and Reliability Features of Advanced Nonvolatile Memories Based on Discrete Traps (Silicon Nanocrystals, SONOS) / IEEE Transactions on Device
C. Kang / 2007 / / Proceedings of 45th Annual IEEE International Reliability Physics Symposium 2007 : 167 ~
E. Lusky / 2001 / / Ext. Abst. 201 Conf. Solid State Devices and Materials, 2001 : 534 ~
A. Suhane / 2009 / / Proceedings of the European presented at the Solid State Device Research Conference 2009 : 276 ~
B. DeSalvo / 2004 / Performance and Reliability Features of Advanced Nonvolatile Memories Based on Discrete Traps (Silicon Nanocrystals, SONOS) / IEEE Transactions on Device
C. Kang / 2007 / / Proceedings of 45th Annual IEEE International Reliability Physics Symposium 2007 : 167 ~
E. Lusky / 2001 / / Ext. Abst. 201 Conf. Solid State Devices and Materials, 2001 : 534 ~
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