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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 대한전자공학회 JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE Journal of Semiconductor Technology and Science Vol.20 No.2
- 발행연도
- 2020.4
- 수록면
- 163 - 169 (7page)
- DOI
- 10.5573/JSTS.2020.20.2.163
이용수
초록· 키워드
오류제보하기
For the mobility enhancement of amorphous indium-gallium-zinc oxide thin film transistor (a-IGZO TFT), Ar plasma treatment was proposed at room temperature under air as an economic and continuous process. Through the suggested method, the field effect mobility (μFE) improves significantly from 1.69 cm²/V·s to 4.20 cm²/V·s. The increase of oxygen vacancy (VO) and decrease of metal-oxide bonding are observed in the plasma treated device by X-ray photoelectron spectroscopy (XPS) analysis. The increased VO is thought to enhance the carrier concentration and mobility. Some of VO, however, will be an inactive and deep state in the forbidden energy gap of IGZO and deteriorate the electrical stability. To avoid this side effect, the selective Ar plasma treatment was also adapted on source/drain (S/D) contact region and threshold voltage shift under the constant positive gate bias stress was measured to decrease from 6.2 V to 4.8 V, which is similar with the untreated device of 4.4 V. In the contract region plasma device, the μFE improves also by 39.6 % to 2.35 cm²/V·s mainly due to the reduction of S/D contact resistance extracted by the transmission line method (TLM).
목차
Abstract
I. INTRODUCTION
II. EXPERIMENT
III. RESULT & DISCUSSION
IV. CONCLUSIONS
REFERENCES
참고문헌 (24)
참고문헌 신청
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K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano and H. Hosono, “Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors,, nature, Vol. 432, No. 7016, pp. 488-492, Nov., 2004.
H. Yamauchi, M. Iizuka and K. Kudo, “Fabrication of vertical organic light-emitting transistor using ZnO thin film,” Japanese Journal of Applied Physics, Vol. 46, No. 4S, PP. 2678, Apr., 2007.
J. Nishii, F. M. Hossain, S. Takagi, T. Aita, K. Saikusa,Y. Ohmaki, I. Ohkubo, S. Kishimoto, A. Ohtomo and T. Fukumura, “High mobility thin film transistors with transparent ZnO channels,” Japanese Journal of Applied Physics, Vol. 42, No. 4A, PP. L347, Apr., 2003.
E. Fortunato, P. Barquinha and R. Martins, “Oxide semiconductor thin?film transistors: a review of recent advances, Advanced materials, Vol. 24, No. 22, pp. 2945-2986, May, 2012.
K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano and H. Hosono, “Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors,, nature, Vol. 432, No. 7016, pp. 488-492, Nov., 2004.
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