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자료유형
학술대회자료
저자정보
Ko, Sung-Woo (Dept. of Electronics Eng, Sejong University) Shin, Hyung-Cheol (Inter-University Semiconductor Research center [ISRC] and School of Electrical Engineering, Seoul National University) Park, Byung-Gook (Inter-University Semiconductor Research center [ISRC] and School of Electrical Engineering, Seoul National University) Lee, Jong-Duk (Inter-University Semiconductor Research center [ISRC] and School of Electrical Engineering, Seoul National University) Jun, Pil-Goo (Dept. of Electronics Eng, Sejong University) Kwak, Byung-Hwak (Dept. of Electronics Eng, Sejong University) Noh, Hyung-Wook (Dept. of Electronics Eng, Sejong University) Uh, Hyung-Soo (Dept. of Electronics Eng, Sejong University)
저널정보
한국정보디스플레이학회 한국정보디스플레이학회 International Meeting 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
발행연도
2004.1
수록면
453 - 455 (3page)

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The effect of rapid thermal annealing (RTA) treatment on the growth characteristics of CNTs was investigated. We observed that Ni catalyst film was agglomerated by RTA treatment, resulting in the formation of Ni nanoparticles. The well aligned CNTs were grown from the Ni nanoparticles by plasma enhanced chemical vapor deposition (PECVD). It is shown that the size and distribution of the nanoparticles depend mainly on the annealing temperature and initial thickness of the metal layer. Also, it was found that CNTs grown through optimal RTA treatment had the more improved field emission characteristics than those of as-grown CNTs.

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